| 微带线碳化硅E类功率放大器设计 |
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| 引用本文： | 徐志超,吕红亮,张玉明,张义门.微带线碳化硅E类功率放大器设计[J].微电子学,2009,39(6). |
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| 作者姓名： | 徐志超 吕红亮 张玉明 张义门 |
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| 作者单位： | 西安电子科技大学,微电子学院,宽禁带半导体材料与器件重点实验室,西安,710071 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | SiC MESFET由于其高击穿电压和低输出电容,适合用于设计E类功率放大器.设计了一种结构简单的微带线拓扑E类负载网络,可以匹配至标准电阻,且抑制高至5阶的谐波.用ADS软件进行电路仿真,在2.14 GHz频率点下,峰值功率附加效率(PAE)为70.5%,漏极效率可达80%,功率增益约为10 dB.
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| 关 键 词： | E类功率放大器 微带线 谐波抑制 |
Design of Transmission-Line Silicon Carbide Class-E Power Amplifiers |
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| XU Zhichao,L Hongliang,ZHANG Yuming,ZHANG Yimen.Design of Transmission-Line Silicon Carbide Class-E Power Amplifiers[J].Microelectronics,2009,39(6). |
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| Authors: | XU Zhichao L Hongliang ZHANG Yuming ZHANG Yimen |
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| Affiliation: | XU Zhichao,L(U) Hongliang,ZHANG Yuming,ZHANG Yimen |
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| Abstract: | Silicon carbide (SiC) metal-semiconductor field effect transistors (MESFET) is a perfect choice for Class-E power amplifiers (PA) due to its high breakdown voltage and low output capacitance.A simple transmission-line Class-E load network was proposed, which could be matched to standard resistance and had a harmonic suppression up to the 5th order for maximum efficiency.Results from ADS (Advanced Design System) simulation showed that, at 2.14 GHz, the circuit had a peak power added efficiency (PAE) of 70.5%, drain efficiency of 80% and power gain of 10 dB. |
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| Keywords: | SiC MESFET Class-E power amplifier SiC MESFET Transmission-line Harmonic suppression |
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