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基于90 nm CMOS工艺的37 GHz分频器
引用本文:安鹏,陈志铭,桂小琰.基于90 nm CMOS工艺的37 GHz分频器[J].微电子学,2015,45(4):441-443, 448.
作者姓名:安鹏  陈志铭  桂小琰
作者单位:北京理工大学 微电子技术研究所, 北京 100081,北京理工大学 微电子技术研究所, 北京 100081,北京理工大学 微电子技术研究所, 北京 100081
基金项目:国家自然科学基金资助项目(61201040;61301006);高等学校学科创新“引智计划”资助项目(B14010)
摘    要:对高速分频器的注入锁定特性进行了研究,并实现了一个基于电流模逻辑的分频器。该分频器采用了电感峰值技术,分频范围可达25~37.3 GHz,电源电压为1.2 V,功耗为24 mW。芯片采用TSMC 90 nm CMOS工艺设计制造,并给出了测试结果。

关 键 词:电流模逻辑    分频器    电感峰值技术    注入锁定
收稿时间:2014/6/12 0:00:00

A 37 GHz Frequency Divider Based on 90 nm CMOS Process
AN Peng,CHEN Zhiming and GUI Xiaoyan.A 37 GHz Frequency Divider Based on 90 nm CMOS Process[J].Microelectronics,2015,45(4):441-443, 448.
Authors:AN Peng  CHEN Zhiming and GUI Xiaoyan
Affiliation:Institute of Microelectronics, Beijing Institute of Technology, Beijing 100081, P. R. China,Institute of Microelectronics, Beijing Institute of Technology, Beijing 100081, P. R. China and Institute of Microelectronics, Beijing Institute of Technology, Beijing 100081, P. R. China
Abstract:The injection-locking feature of high-speed frequency divider was investigated, and a frequency divider based on current mode logic (CML) was implemented. Inductive-peaking technique was adopted. The divider achieved a wide frequency locking range from 25 GHz to 37.3 GHz and consumed 24 mW from a 1.2 V supply. The chip was fabricated in TSMC 90 nm CMOS process. Measurement has been done for this design.
Keywords:Current mode logic  Frequency divider  Inductive-peaking  Injection-locking
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