| 漂移区覆盖高k薄膜的高压LDMOS器件优化设计 |
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| 引用本文： | 王伟宾,赵远远,钟志亲,王姝娅,戴丽萍,张国俊.漂移区覆盖高k薄膜的高压LDMOS器件优化设计[J].微电子学,2012,42(2):261-265. |
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| 作者姓名： | 王伟宾 赵远远 钟志亲 王姝娅 戴丽萍 张国俊 |
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| 作者单位： | 电子科技大学 电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 摘 要： | 为了获得高耐压、低导通电阻的横向双扩散MOSFET(LDMOS)器件,综合利用高介电常数(高k)薄膜技术和场板技术,设计出一种漂移区表面采用"高k薄膜+氧化层+场板"结构的功率器件,有效降低了PN结弯角高电场和场板边缘峰值电场。使用器件仿真工具MEDICI进行验证,并分析高k薄膜厚度、氧化层厚度、高k薄膜相对介电常数以及栅场板长度对器件性能的影响,最终实现了耐压达到820V、比导通电阻降至13.24Ω.mm2且性能稳定的LDMOS器件。
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| 关 键 词： | LDMOS器件 高k薄膜 场板 击穿电压 导通电阻 |
Optimization Design of LDMOS Device with Drift Region Covered by High-k Thin Film |
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| WANG Weibin
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ZHAO Yuanyuan
,
ZHONG Zhiqin
,
WANG Shuya
,
DAI Liping
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ZHANG Guojun.Optimization Design of LDMOS Device with Drift Region Covered by High-k Thin Film[J].Microelectronics,2012,42(2):261-265. |
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| Authors: | WANG Weibin ZHAO Yuanyuan ZHONG Zhiqin WANG Shuya DAI Liping ZHANG Guojun |
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| Affiliation: | (State Key Lab of Electronic Thin Films and Integrated Devices,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China) |
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| Abstract: | A high-voltage LDMOS device with drift region covered by high-k film + oxide layer + field plate structure was presented.To achieve high breakdown voltage and low on-resistance,high-k film and field plate were used to reduce peak field on the surface of reverse-biased PN junction and the edge of field plate.Simulation was made with MEDICI to investigate effects of structural parameters,such as high-k thin film thickness,oxide layer thickness,high-k permittivity and gate plate length,on performance of the device.Finally,an 820 V LDMOS with on-resistance down to 13.24 Ω·mm2 was implemented. |
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| Keywords: | LDMOS device High-k thin film Field plate Breakdown voltage On-resistance |
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