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| 剂量率对PMOS剂量计辐射响应的影响 | |
| 引用本文： | 孙静,郭旗,张军,任迪远,陆妩,余学锋,文林,王改丽,郑玉展.剂量率对PMOS剂量计辐射响应的影响[J].微电子学,2009,39(1). |
| 作者姓名： | 孙静 郭旗 张军 任迪远 陆妩 余学锋 文林 王改丽 郑玉展 |
| 作者单位： | 1. 新疆大学物理科学与技术学院,乌鲁木齐,830046;中国科学院新疆理化技术研究所,乌鲁木齐,830011 2. 中国科学院新疆理化技术研究所,乌鲁木齐,830011 3. 新疆大学物理科学与技术学院,乌鲁木齐,830046 4. 中国科学院新疆理化技术研究所,乌鲁木齐,830011;中国科学院研究生院,北京,100049 |
| 摘 要： | 研究了不同剂量率下PMOS剂量计阈值电压的响应.在VTH偏置下,观察了剂量率对PMOS剂量计辐射响应线性度和灵敏度的影响规律及其退火特性.试验结果表明:随着剂量率降低,n值趋近于1,表现出较好的线性度,响应灵敏度也增加.分析认为,PMOS剂量计有明显的低剂量率辐射敏感增强效应(ELDRS),对其损伤机理作了进一步的讨论. |
| 关 键 词： | 剂量计 剂量率 阈值响应 灵敏度 |
Influence of Dose Rate on Radiation Response of PMOSFET Dosimeter |
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| SUN Jing,GUO Qi,ZHANG Jun,REN Diyuan,LU Wu,YU Xuefeng,WEN Lin,WANG Gaili,ZHENG Yuzhan.Influence of Dose Rate on Radiation Response of PMOSFET Dosimeter[J].Microelectronics,2009,39(1). | |
| Authors: | SUN Jing GUO Qi ZHANG Jun REN Diyuan LU Wu YU Xuefeng WEN Lin WANG Gaili ZHENG Yuzhan |
| Affiliation: | 1.Dept.of Physics;Xinjiang University;Urumqi 830046;P.R.China;2.Xinjiang Technical Institute of Physics & Chemistry;The Chinese Academy of Sciences;Urumqi 830011;3.Graduate University of the Chinese Academy of Sciences;Beijing 100049;P.R.China |
| Abstract: | Response of threshold voltage shift of PMOSFET dosimeter was investigated at various dose rates.Based on Vth biased model,the dose-rate effects of PMOSFET dosimeter on the linearity and sensitivity and its annealing features were observed.Results showed that,as dose rate decreased,the n value tended towards 1,with better linearity and higher sensitivity,and that PMOSFET dosimeter obviously exhibited enhanced low-dose-rate sensitivity(ELDRS).And damage mechanism of ELDRS was also discussed. |
| Keywords: | PMOSFET |
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