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KrF脉冲激光退火制备锐钛矿TiO2薄膜
引用本文:张自锋,张志威,洪荣墩,陈厦平,吴正云.KrF脉冲激光退火制备锐钛矿TiO2薄膜[J].量子电子学报,2015,32(6):673-677.
作者姓名:张自锋  张志威  洪荣墩  陈厦平  吴正云
作者单位:厦门大学物理系,福建 厦门 361005
基金项目:国家自然科学基金资助项目(61176049 & 61307047)
摘    要:在常温下,用射频磁控溅射在石英衬底上沉积厚度约为200 nm 的TiO2薄膜,然后使用波长为248 nm 的KrF脉冲激光器,在不同功率密度下对薄膜样品进行辐照退火处理,并采用X射线衍射(XRD)、拉曼(Raman)、X射线电子能谱(XPS)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、高分辨率扫描隧道显微镜(HRTEM)以及选择区域电子衍射(SAED)、紫外可见分光光度计等方法分析不同激光功率密度退火对TiO2薄膜的结构、表面形貌和透射率等性能的影响。结果表明当激光功率密度为0.5 J/cm2时,可获得高质量的锐钛矿TiO2薄膜,当继续增大光功率密度时,TiO2薄膜变为(1 1 0)取向的金红石相,其薄膜表面粗糙度也相应增大。

关 键 词:KrF  脉冲激光  半导体  TiO2  光学特性
收稿时间:2015-04-10
修稿时间:2015-05-09

Fabrication of anatase TiO2 by KrF pulse laser annealing
ZHANG Zi-feng,ZHANG Zhi-wei,HONG Rong-dun,CHEN Xia-ping,WU Zheng-yun.Fabrication of anatase TiO2 by KrF pulse laser annealing[J].Chinese Journal of Quantum Electronics,2015,32(6):673-677.
Authors:ZHANG Zi-feng  ZHANG Zhi-wei  HONG Rong-dun  CHEN Xia-ping  WU Zheng-yun
Affiliation:Department of Physics, Xiamen University, Xiamen 361005,  China
Abstract:TiO2 thin films of ~200 nm were prepared by RF magnetron sputtering on quartz substrates at room temperature, and then annealed by a KrF pulse laser with wavelength 248 nm under different power densities in the air. The effect of laser power density on the characteristics of films was systematically analyzed using X-ray diffractometry (XRD), Raman spectral, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atom force microscopy (AFM), High resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) and UV-vis spectrophotometer. The results showed that high-quality anatase TiO2 films can be obtained when the power density was 0.5 J/cm2. By increasing the power density continually, TiO2 showed the predominant orientation with rutile phase along (1 1 0) reflection, with the roughness of the films increasing.
Keywords:KrF  pulse laser  semiconductor  TiO2  optical property
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