| 多量子阱垂直腔面发射半导体激光器的速率方程分析 |
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| 引用本文： | 潘炜,张晓霞.多量子阱垂直腔面发射半导体激光器的速率方程分析[J].量子电子学报,1999,16(4):324-328,337. |
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| 作者姓名： | 潘炜 张晓霞 |
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| 作者单位： | 西南交通大学计算机与通信工程学院!成都，610031，西南交通大学计算机与通信工程学院!成都，610031，西南交通大学计算机与通信工程学院!成都，610031，西南交通大学计算机与通信工程学院!成都，610031，西南交通大学计算机与通信工程学院!成都，610031 |
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| 摘 要： | 依据多量子阱垂直腔面发射半导体激光器（ＶＣＳＥＬＳ）的结构特点，并考虑到腔量子电动力学中自发辐射增强效应，建立了多量子阱ＶＣＳＥＬＳ的速率方程，并给出了其方程的严格解析解，在此基础之上，讨论了ＶＣＳＥＬＳ的稳态特性，并与普通开腔和三维封闭腔中的结果进行了比较，给出了Ｖ
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| 关 键 词： | 垂直腔面发射 半导体激光器 VCSELS 速率方程 |
Rate Equation Analysis of the Multi-quantum Well VCSELs |
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| Pan Wei,Zhang XiaoXia,Luo Bin, Lu Hongchang,Chen Jianguo.Rate Equation Analysis of the Multi-quantum Well VCSELs[J].Chinese Journal of Quantum Electronics,1999,16(4):324-328,337. |
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| Authors: | Pan Wei Zhang XiaoXia Luo Bin Lu Hongchang Chen Jianguo |
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| Abstract: | According to structural property of multi-quantum well vertical cavity surface emission laser(VCSELs) and enhancing effect of spontaneous emission of cavity quantum electron dynamics, the rate equation of multi-quantum well VCSELs is established, and the strict analytic solution are obtained, Based on this, the steady characteristics of VCSELs is discussed, and the results are compared with that of ordinary opened cavities and three-dimensional closed cavities. We have got the relation of device parameter (well-number, well-wide et al.) on threshold current,output power and spontaneous emission factor. The result is benefit of VCSELs both in theoretical analysis and device structures. |
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| Keywords: | VCSELs enhancing effect of spontaneous emission spontaneous emission factor multi-quantum well closed cavities |
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