| ZnSe:Cl, N单晶薄膜中载流子浓度的 电学法测量和光学法确认 |
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| 引用本文： | 王善忠,谢绳武,庞乾骏,郑杭,夏宇兴,姬荣斌,巫艳,李标,杨建荣,何力.ZnSe:Cl, N单晶薄膜中载流子浓度的 电学法测量和光学法确认[J].量子电子学报,2000,17(1):85-89. |
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| 作者姓名： | 王善忠 谢绳武 庞乾骏 郑杭 夏宇兴 姬荣斌 巫艳 李标 杨建荣 何力 |
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| 作者单位： | 1. 上海交通大学应用物理系，光电材料与光电器件实验室上海 200030
2. 中国科学院上海技术物理研究所，半导体薄膜材料研究中心上海 200083 |
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| 基金项目： | 国家杰出青年基金、上海市应用物理中心 资助。 |
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| 摘 要： | 为了证实某一研究结果的正确性，常常需要采用两种以上相互独立的方法对同一物理量进行测量或计算。本文采用新颖的远红外光谱技术和常用的Ｈａｌｌ、Ｃ－Ｖ等电学测量技术同时对ＭＢＥ生长的ＺｎＳｅ：Ｃｌｍ，Ｎ薄膜中的载流子浓度进行评价研究，发现电８学法和光学法测量的结果可以很好地吻合，从而确认了ＺｎＳｅ宽禁带蓝绿色发光材料中较高的掺杂水平。
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| 关 键 词： | 单晶薄膜 载流子浓度 电学法测量 光学法测量 |
| 收稿时间： | 1998/11/26 |
| 修稿时间： | 1998年11月26 |
Examination and Confirmation of the Carrier Concentration in ZnSe:Cl,N Crystal Films by Electrical and Optical Methods |
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| Wang Shanzhong,Xie Shengwu,Pang Qianjun,Zheng Hang,Xia Yuxing,Ji Rongbin,Wu Yan,Li Biao,Yang Jianrong,He Li.Examination and Confirmation of the Carrier Concentration in ZnSe:Cl,N Crystal Films by Electrical and Optical Methods[J].Chinese Journal of Quantum Electronics,2000,17(1):85-89. |
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| Authors: | Wang Shanzhong Xie Shengwu Pang Qianjun Zheng Hang Xia Yuxing Ji Rongbin Wu Yan Li Biao Yang Jianrong He Li |
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| Abstract: | To verify the correctness of a research result, more than two kinds of independent method are often needed to examine or calculate the same physics quantity. The carrier concentration in both n-type ZnSe:Cl and p-type ZnSe:N crystal films is evaluated with Hall and C-V teChnique, as well as far infrared spectrum technique. It is found that the experiment data obtained with these two kinds of way coincide well with eaCh other. Therefore, we can confirm the ZnSe, a widegap semiconductor material for blue/green light emitting devices, of high doping level. |
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| Keywords: | ZnSeCl N crystal film carrier concentration electrical examination optical examination |
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