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高亮度GaN基蓝光与白光LED的研究和进展
引用本文:刘坚斌,李培咸,郝跃.高亮度GaN基蓝光与白光LED的研究和进展[J].量子电子学报,2005,22(5):673-679.
作者姓名:刘坚斌  李培咸  郝跃
作者单位:西安电子科技大学微电子研究所,陕西,西安,710071
基金项目:国家电子信息产业发展基金,陕西省电子发展基金
摘    要:GaN基蓝光LED高亮度化对传统照明光源带来了很大冲击.简述了GaN材料和GaN基蓝光LED器件结构的发展,阐述了为了改善LED性能的一些新措施、LED在照明光源上的应用优势,给出了白光LED的常用制备方法以及最新的研究成果.最后,提出了需要着重解决的问题.

关 键 词:光电子学  半导体材料  蓝光LED  白光LED
文章编号:1007-5461(2005)05-0673-07
收稿时间:2004-09-25
修稿时间:2004年9月25日

Research and development of high brightness GaN-based blue LED and white LED
LIU Jian-bin,LI Pei-xian,HAO Yue.Research and development of high brightness GaN-based blue LED and white LED[J].Chinese Journal of Quantum Electronics,2005,22(5):673-679.
Authors:LIU Jian-bin  LI Pei-xian  HAO Yue
Abstract:The high-brightness GaN-based blue-light- emitting diodes impacts traditional illumination lamp-sources largely. This paper briefly introduces GaN material, the development on blue LED based on it with the technique enhancement and several approaches to improve the performance of the LED; Applications of LED on illumination field and its advantages over the traditional lamp-sources are pointed out; Two ways to fabricate white LED and recent progress in white LED are included; At last important problems that we must face are put forward.
Keywords:GaN
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