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晶体生长期间热腔热耗散
引用本文:曹余惠.晶体生长期间热腔热耗散[J].量子电子学报,1997,14(5):470-474.
作者姓名:曹余惠
作者单位:中国科学院安徽光学精密机械研究研究所!合肥,230031
摘    要:本文研究了引上法高温晶体生长期间热腔的热耗散。在晶体生长过程中,辐射引起的热耗散减小,减小的速率主要由晶体对熔体热辐射的吸收系数决定。对流引起的热耗散随晶体长度增加而增加。热耗散的变化引起输入功率,热腔质热传递的变化,不利于晶体生长。通过调节对流气体的压力,可以改变对流引起的热耗散,从而改变液面上纵向温度梯度。

关 键 词:热耗散  质热传递  界面反转  温度梯度  晶体生长

The Heat Loss of Hot Grower during Crystal Growth
Cao yuhui.The Heat Loss of Hot Grower during Crystal Growth[J].Chinese Journal of Quantum Electronics,1997,14(5):470-474.
Authors:Cao yuhui
Abstract:The heat loss of hot grower during crystal growth by CZ method has been studied inthis paper .The heat loss caused by radiation is decreased during crystal growth and thedecreasing rate determined by the absorbption coefficient of the crystal for the heat radi-ation of melt.The heat loss due to convection is increased.The input power and transferof head and mass in the hot grower is changed with heat loss and it is harmful f0r crystalgrowth.The radial temperature gradient over the melt can be controlled by the heat lossfrom convection, which is adjusted through the pressure of convecting gas. The longitudi-nal temperature gradieut of melt can be controlled by the heat loss from conduction,whichis regulated by the ambient temperature.The new controlled methods for crystal growthare provided.
Keywords:heat loss  transfer of heat and mass  interface inversion  temperature gradieut
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