Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC |
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| Affiliation: | 1. Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028, South Africa;2. Departments of Physics, Obafemi Awolowo University, Ile-Ife 220005, Nigeria;1. Department of Physics, University of Pretoria, Pretoria, South Africa;2. South African Nuclear Energy Corporation SOC Limited, South Africa;3. Department of Physics, Busitema University, Tororo, Uganda;4. 1 FLNR, Joint Institute for Nuclear Research, Dubna, Russia;5. National Research Nuclear University MEPhI, Moscow, Russia;6. Dubna State University, Dubna, Russia;1. Department of Physics, University of Pretoria, Pretoria 0002, South Africa;2. Department of Physics, University of Zululand, KwaDlangezwa 3886, South Africa;3. South African Nuclear Energy Corporation SOC Limited, Pretoria 0001, South Africa;1. Nuclear Physics Institute of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Rez, Czech Republic;2. Department of Physics, Faculty of Science, J.E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem, Czech Republic;3. Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague, Czech Republic;1. Department of Chemistry, Rhodes University, P.O. Box 94, Grahamstown, South Africa;2. Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria;3. Department of Chemistry, Gebze Technical University, P.O. Box 141, 41400 Gebze-Kocaeli, Turkey |
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| Abstract: | We have studied the defects introduced in n-type 4H-SiC during electron beam deposition (EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from current-voltage and capacitance-voltage measurements showed deviations from ideality due to damage, but were still well suited to a DLTS study. We compared the electrical properties of six electrically active defects observed in EBD Schottky barrier diodes with those introduced in resistively evaporated material on the same material, as-grown, as well as after high energy electron irradiation (HEEI). We observed that EBD introduced two electrically active defects with energies EC – 0.42 and EC – 0.70 eV in the 4H-SiC at and near the interface with the tungsten. The defects introduced by EBD had properties similar to defect attributed to the silicon or carbon vacancy, introduced during HEEI of 4H-SiC. EBD was also responsible for the increase in concentration of a defect attributed to nitrogen impurities (EC – 0.10) as well as a defect linked to the carbon vacancy (EC – 0.67). Annealing at 400 °C in Ar ambient removed these two defects introduced during the EBD. |
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| Keywords: | 4H-SiC Defects DLTS Annealing Electron beam deposition |
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