Improved multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer |
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| Affiliation: | 1. Department of Physics, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 700009, India;2. Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata 700009, India;1. Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Tunis-El Manar University, 2092, Tunisia;2. King Khalid University, Faculty of Science, Physics, Department, P.O. Box 9004, Abha 61413, Saudi Arabia;3. Laboratoire de Physique des Rayonnements, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba 23000, Algeria;1. Physics Department, Faculty of Education, Ain Shams University, Roxy, P.O. 11757, Cairo, Egypt;2. Physics Department, Faculty of Science, Ain Shams University, Abbassia, P.O. 11566, Cairo, Egypt;3. Solid State Physics Department, National Research Centre, 33 El Bohouth St. (former El Tahrir st.), Dokki, P.O.12622, Giza, Egypt;1. Institute of Polymeric Materials, Sahand University of Technology, Tabriz, Iran;2. Faculty of Polymer Engineering, Sahand University of Technology, Tabriz, Iran;1. Liaoning Key Laboratory of Optoelectronic Films and Materials, School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600, China;2. State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People''s Republic of China;1. Programa de Doctorado en Nanociencias y Nanotecnología, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional, No. 2508, México D.F. C.P. 07360, Mexico;2. Departamento de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional, No. 2508, México D.F. C.P. 07360, Mexico |
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| Abstract: | An improved multi-recessed 4H–SiC metal semiconductor field effect transistor (MRD-MESFET) with double-recessed p-buffer layer (DRB-MESFET) is proposed in this paper. By introducing a double-recessed p-buffer layer, the gate depletion layer is further modulated, and higher drain saturation current and DC transconductance are obtained compared with the MRD-MESFET. The simulations show that the drain saturation current of the DRB-MESFET is about 42.4% larger than that of the MRD-MESFET. The DC transconductance of the DRB-MESFET is almost 15% higher than that of the MRD-MESFET and very close to that of double-recessed structure (DR-MESFET) at the bias conditions of Vgs=0 V and Vds=40 V. The proposed structure has an improvement of 26.1% and 74.2% in the output maximum power density compared with that of the MRD-MESFET and DR-MESFET, respectively. In the meanwhile, the proposed structure possesses smaller gate-source capacitance, which results in better RF characteristics. |
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| Keywords: | 4H–SiC MESFET Multi-recessed drift regions (MRD) Double-recessed p-buffer layer (DRB) Drain saturation current DC transconductance |
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