Band gap engineering by substitution of S by Se in nanostructured CdS1?xSex thin films grown by soft chemical route for photosensor application |
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| Affiliation: | 1. Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, M. S., India;2. Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004, M. S., India;3. Nano material Lab, Department of chemistry, Hanyang University Seoul, 133-791, South Korea;1. College of Environment and Materials Engineering, Yantai University, 32, Qingquan RD, Laishan District, Yantai 264005, China;2. Graduate Institute of Environmental Engineering, National Taiwan University, Taipei, Taiwan;3. Department of Environmental Engineering, National I-Lan University, No. 1 Sheen-Long Road, Ilan 260, Taiwan;1. Laboratory Physico-Chemistry of Advanced Materials, University of Djillali Liabes, BP 89, Sidi Bel Abbes 22000, Algeria;2. Magnetic Laboratory, Djillali Liabes University, Sidi Bel Abbes 22000, Algeria;3. Djillali Liabes University, Faculty of Exact Sciences, Department of Physics, PO Box 089, Sidi Bel Abbes 22000, Algeria;4. Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis, Malaysia;5. Modeling and Simulation Materials Sciences Laboratory, Sidi-Bel-Abbès University, Sidi Bel Abbes 22000, Algeria;6. Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India;7. Djillali Liabes University, Faculty of Letters, Languages and Arts, Department of Foreign Languages, English Section, Sidi Bel Abbes 22000, Algeria;1. College of Mathematics and Physics, Huaiyin Institute of Technology, 1 Meicheng Road, Huaian, Jiangsu, Huaian 223002, PR China;2. National Key Laboratory of Science and Technology on Surface Engineering, Lanzhou Institute of Physics, PO Box 94, Lanzhou 730000, Gansu, PR China;3. College of Chemistry, Chongqing Normal University, Chongqing 401331, PR China;4. College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054, PR China;1. School of Material Science and Engineering, Jiangsu University, Zhenjiang, 212013, China;2. Institute of Condensed State Physics, Jilin Normal University, Siping 136000, China;3. Department of Chemistry, Purdue University, West Lafayette 47907, United States |
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| Abstract: | Ternary alloys of CdS1?xSex (x=0, x=0.2, x=0.4, x=0.6, x=0.8, x=1) thin films were prepared on to glass substrates by a simple and economical soft chemical route (chemical bath deposition) at 50° to 80 °C in air. The as-grown films were characterized by optical and electrical measurement systems, X-ray diffraction (XRD), Energy dispersive X-ray analysis (EDAX) and SEM (scanning electron microscopy). The optical study reveals shift in the absorption edge towards the higher wavelengths, i.e. the band gap decreases as a function of ‘x’ (quantity of selenium in the bath). I–V measurement of CdS (resulted when x=0), CdS1?xSex (x=0.2, x=0.4, x=0.6, x=0.8) and CdSe (resulted when x=1) thin films under dark and illumination conditions (60 W) were measured. Increase in photoconductivity is observed, suggesting its applicability in photosensor devices. Electrical resistivity shows semiconducting behavior and activation energy decreases. The XRD patterns reveals that deposited thin films have hexagonal mixed structure. EDAX confirmed the compositional parameters. SEM images showed uniform deposition of the material over the entire glass substrate. |
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| Keywords: | Thin film X-ray diffraction Optical properties Electrical properties Soft chemical route |
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