Measurements of n-InGaAs with MBE layers: Relevance of negative magnetoresistance in the investigated samples |
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| Affiliation: | 1. Department of Physics, Faculty of Science, Taif University, Taif, Saudi Arabia;2. Department of Mathematical and Physical Engineering, Faculty of Engineering (Shoubra), Benha University, Cairo, Egypt;3. Department of Physics, Faculty of Science, Aljouf University, Aljouf, Saudi Arabia;4. Department of Physics, Faculty of Science, Ain Shams University, Abbassia, Cairo, Egypt;1. Nanotechnology and Advanced Materials Research Unit ( NAMRU), Faculty of Engineering, University of Kufa, 21 Najaf, Iraq;2. Department of Physics, Faculty of Science, University of Kufa, 21 Najaf, Iraq;1. New Technologies Research Centre, University of West Bohemia, Univerzitni 8, 306 14 Pilsen, Czech Republic;2. Center of Excellence for Geopolymers and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis, Malaysia;1. Research Centre of Materials Science, Beijing Institute of Technology, Beijing 100081, PR China;2. State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University, Beijing 100871, PR China;1. Graduate Institute of Electro-Optical Engineering & Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;2. Department of Information Technology & Communication, Shih Chien University, Kaohsiung Campus, Neimen, Kaohsiung 845, Taiwan |
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| Abstract: | Measurements of nH were performed. nH values showed a distinct increase at temperatures below ~90 K (1.1 μm n-InGaAs samples) and a decrease at temperatures below ~30 K (7 μm n-InGaAs samples), depending on the doping level. These trends might be related to the magnetoresistance (MR) of the n-InGaAs samples. The MR behavior of the n-InGaAs samples with respect to magnetic field and temperature was apparently dependent on the doping level. Two n-InGaAs samples, one of which had a thin InGaAs epilayer (1.1 μm) and the other with a thicker (7 μm) epilayer, showed interesting behavior at low temperature. Their behavior at magnetic fields of approximately −15000 to +15,000 G were determined. The resistivity ((ρG – ρ0)/ρ0) of the 1.1 μm sample was negative at temperatures lower than 30 K. |
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| Keywords: | Negative magnetoresistivity InGaAs epilayer |
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