| 硅纳米线传感器灵敏度研究进展 |
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| 引用本文： | 方敏,闫江,魏千惠,张青竹,魏淑华,王艳蓉,张兆浩,熊恩毅,张双,张静.硅纳米线传感器灵敏度研究进展[J].微纳电子技术,2021(3):225-232,253. |
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| 作者姓名： | 方敏 闫江 魏千惠 张青竹 魏淑华 王艳蓉 张兆浩 熊恩毅 张双 张静 |
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| 作者单位： | 北方工业大学信息学院;有研科技集团有限公司智能传感功能材料国家重点实验室;有研工程技术研究院有限公司;中国科学院微电子研究所先导工艺研发中心;中国科学院大学 |
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| 基金项目： | 国家科技重大专项资助项目(2017ZX02301007-001);中国科学院青年促进会基金资助项目(Y9YQ01R004);中国科学院微电子器件与集成技术重点实验室开放基金资助项目(E0YS01X001)。 |
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| 摘 要： | 对基于一维纳米材料的硅纳米线场效应晶体管(SiNW-FET)传感器在疾病早期诊断中检测超低浓度生物标志物的优势进行了简单阐述,提出提高SiNW-FET传感器检测灵敏度的重要性和必要性。介绍了SiNW-FET传感器的工作原理、检测灵敏度和检测限(LOD)。重点讨论了通过对SiNW表面修饰方法的优化、使用不同结构形状SiNW和降低传感器德拜屏蔽效应等方法提高SiNW-FET传感器的灵敏度,对各种提高灵敏度的方法和对应方法下SiNW-FET传感器的检测限或灵敏度进行了对比总结。最后,总结了提高SiNW-FET传感器灵敏度的方法和目前亟待解决的问题,并展望了其发展趋势。
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| 关 键 词： | 硅纳米线场效应晶体管(SiNW-FET) 一维纳米材料 传感器 灵敏度 检测限(LOD) 表面修饰 |
Research Progress in Sensitivity of Silicon Nanowire Sensors |
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| Fang Min,Yan Jiang,Wei Qianhui,Zhang Qingzhu,Wei Shuhua,Wang Yanrong,Zhang Zhaohao,Xiong Enyi,Zhang Shuang,Zhang Jing.Research Progress in Sensitivity of Silicon Nanowire Sensors[J].Micronanoelectronic Technology,2021(3):225-232,253. |
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| Authors: | Fang Min Yan Jiang Wei Qianhui Zhang Qingzhu Wei Shuhua Wang Yanrong Zhang Zhaohao Xiong Enyi Zhang Shuang Zhang Jing |
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| Affiliation: | (School of Information Science and Technology,North China University of Technology,Beijing 100144,China;State Key Laboratory of Advanced Materials for Smart Sensing,GRINM Group Co.Ltd.,Beijing 100088,China;GRIMAT Engineering Institute Co.Ltd.,Beijing 101402,China;Advanced Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China) |
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| Abstract: | The advantages of silicon nanowire field-effect transistor(SiNW-FET)sensors based on one-dimensional nanomaterials for the detection of ultra-low concentration biomarkers in the early diagnosis of diseases are briefly described.The importance and necessity of improving the detection sensitivity of SiNW-FET sensors are proposed.The working principle,detection sensitivity and limit of detection(LOD)of SiNW-FET sensors are introduced.The focus is on improving the sensitivity of SiNW-FET sensors by optimizing the surface modification methods of SiNWs,using SiNWs with different structures and shapes and reducing the Debye shielding effect of sensors.Various methods of improving the sensitivity and the LOD or detection sensitivity of SiNW-FET sensors with corresponding methods are compared and summarized.Finally,the methods of improving the sensitivity of SiNW-FET sensors and the most urgently resolved current problems are summarized,and the development trends are prospected. |
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| Keywords: | silicon nanowire field-effect transistor(SiNW-FET) one-dimensional nanomaterial sensor sensitivity limit of detection(LOD) surface modification |
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