| 单层多晶的EEPROM |
| |
| 引用本文： | 任涛,刘志弘,朱钧.单层多晶的EEPROM[J].微纳电子技术,2003(Z1). |
| |
| 作者姓名： | 任涛 刘志弘 朱钧 |
| |
| 作者单位： | 清华大学微电子学研究所 北京100084
(任涛，刘志弘)，清华大学微电子学研究所 北京100084(朱钧) |
| |
| 摘 要： | 针对传统双层多晶EEPROM的诸多不足之处 ,介绍了相对较有潜力的单层多晶的EEP ROM ,主要对比了传统的双层多晶的EEPROM和单层多晶的EEPROM (singlepolyEEPROM ) ,展示了singlepolyEEPROM的应用前景 ,同时提出了singlepolyEEPROM所面临的问题 ,并有针对性地给出了几种解决方案
|
| 关 键 词： | 单层多晶EEPROM 标准CMOS工艺 三阱工艺 |
Single poly EEPROM |
| |
| REN Tao,LIU Zhi hong,ZHU Jun.Single poly EEPROM[J].Micronanoelectronic Technology,2003(Z1). |
| |
| Authors: | REN Tao LIU Zhi hong ZHU Jun |
| |
| Abstract: | EEPROM has been widely used for the control of microprocessors and logic circuits. However, traditional EEPROM requires special multipolysilicon processes and multioxidation for two thin SiO 2 layers. Many masks are needed which result in longer process turnaround time, lower yield, higher cost, and lower reliability. Single poly EEPROM has simple process, which is compatible to standard CMOS process. It is also promising for low voltage applications. In this paper, traditional double-poly EERPOM and new single poly EEPROM are contracted, some challenges which single poly EEPROM is facing are brought forward, some new devices structures of the single poly EEPROM for different application are reviewed. The application and prospect of single poly EEPROM memory devices are proposed. |
| |
| Keywords: | single poly EEPROM standard CMOS processes triple well structure |
| 本文献已被 CNKI 等数据库收录！ |
|
