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| 压印技术制备超高密度Si_2Sb_2Te_5基相变存储阵列 | |
| 引用本文： | 刘彦伯,闵国全,宋志棠,周伟民,张静,张挺,万永中,李小丽,张剑平.压印技术制备超高密度Si_2Sb_2Te_5基相变存储阵列[J].微纳电子技术,2009,46(1). |
| 作者姓名： | 刘彦伯 闵国全 宋志棠 周伟民 张静 张挺 万永中 李小丽 张剑平 |
| 作者单位： | 1. 上海市纳米科技与产业发展促进中心纳米加工技术实验室,上海200237;中国科学院上海微系统与信息技术研究所纳米技术研究室,上海200050 2. 上海市纳米科技与产业发展促进中心纳米加工技术实验室,上海,200237 3. 中国科学院上海微系统与信息技术研究所纳米技术研究室,上海,200050 |
| 基金项目： | 国家重大科学研究计划，上海市科研发展计划，上海市博后基金，中国博士后科学基金 |
| 摘 要： | 采用低成本、高效率的压印技术实现了高密度相变存储器(PCRAM)存储阵列的制备,开发出Si2Sb2Te5(SST)新材料的4Gbit/inch2存储阵列,存储单元面积为0.04μm2;利用SEM观测压印获得的光刻胶图形阵列以及刻蚀后的SST存储阵列,其单元外形均具有高度的一致性,且单元特征尺寸的3倍标准差均小于6nm;利用AFM研究了SST存储单元的I-V特性,阈值电压为1.56V,高、低电阻态阻值变化超过两个数量级。实验结果表明了SST新材料及压印技术在PCRAM芯片中的应用价值。 |
| 关 键 词： | 紫外压印 高密度相变存储器阵列 Si2Sb2Te5存储单元 标准差(σ) 相变 |
Si_2Sb_2Te_5 Based Ultra-High-Density PCRAM Arrays Fabricated by UV-IL |
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| Liu Yanbo,Min Guoquan,Song Zhitang,Zhou Weimin,Zhang Jing,Zhang Ting,Wan Yongzhong,Li Xiaoli,Zhang Jianping.Si_2Sb_2Te_5 Based Ultra-High-Density PCRAM Arrays Fabricated by UV-IL[J].Micronanoelectronic Technology,2009,46(1). | |
| Authors: | Liu Yanbo Min Guoquan Song Zhitang Zhou Weimin Zhang Jing Zhang Ting Wan Yongzhong Li Xiaoli Zhang Jianping |
| Affiliation: | 1.Laboratory of Nano-Technology;Shanghai Nanotechnology Promotion Center;Shanghai 200237;China;2.Laboratory of Nano-Technology;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China |
| Abstract: | High-density phase change material arrays fabricated by a low cost and high efficient method were considered to be able to speed up research and development of the phase change random access memory (PCRAM),which was characteristic of low-voltage,low-power,fast reading/writing.The Si2Sb2Te5 (SST) based PCRAM array with density of 4 Gbit/inch2 was fabricated by UV-imprint lithography (UV-IL),the PCRAM cell was with size of 0.04 μm2. Dimension stability of the array cell was analyzed with SEM,in each case,the 3σ values was less than 6 nm.Due to the small size of PCRAM cell,I-V performance was measured by a conductive nano-tip on an atomic fore microscope and the typical I-V curve of the cells was with a threshold voltage of 1.56 V.The resistance contrast of high-resistance state and low-resistance state is more than two orders according to the I-V curve.The results show that the SST and UV-IL have potential enormous application in the low-voltage,high-speed PCRAM chip. |
| Keywords: | UV-imprint lithography (UV-IL) high-density phase change random access memory (PCRAM) arrays Si2Sb2Te5(SST) memory cell standard deviation (σ) phase change |
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