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| 利用共振隧穿器件制作太赫兹波源 | |
| 引用本文： | 郭维廉,牛萍娟,李晓云,谷晓,何庆国,冯志红,田爱华,张世林,毛陆虹.利用共振隧穿器件制作太赫兹波源[J].微纳电子技术,2010,47(10). |
| 作者姓名： | 郭维廉 牛萍娟 李晓云 谷晓 何庆国 冯志红 田爱华 张世林 毛陆虹 |
| 作者单位： | 1. 天津工业大学,信息与通信工程学院,天津,300160;专用集成电路重点实验室,石家庄,050051;天津大学电子信息工程学院,天津,300072 2. 天津工业大学,信息与通信工程学院,天津,300160 3. 专用集成电路重点实验室,石家庄,050051 4. 天津大学电子信息工程学院,天津,300072 |
| 摘 要： | 太赫兹波是振荡频率在100GHz～10THz范围的电磁波,利用共振隧穿器件高频高速的特点,适宜制作此波段的振荡源器件。指出与其他类型的太赫兹源器件相比,共振隧穿型太赫兹波源器件具有体积小、重量轻、便于与控制电路集成以及易于进行调制等特点;此外,还适宜用Si透镜进行功率合成,增大其总发射功率。给出几种重要太赫兹共振隧穿器件的结构、制造工艺和器件性能,作为太赫兹技术领域的研究人员选择太赫兹波源器件的参考。 |
| 关 键 词： | 太赫兹波 太赫兹波源 共振隧穿器件 振荡源 毫米波 |
Terahertz Wave Sources Made by Resonant Tunneling Devices |
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| Guo Weilian,Niu Pingjuan,Li Xiaoyun,Gu Xiao,He Qingguo,Feng Zhihong,Tian Aihua,Zhang Shilin,Mao Luhong.Terahertz Wave Sources Made by Resonant Tunneling Devices[J].Micronanoelectronic Technology,2010,47(10). | |
| Authors: | Guo Weilian Niu Pingjuan Li Xiaoyun Gu Xiao He Qingguo Feng Zhihong Tian Aihua Zhang Shilin Mao Luhong |
| Affiliation: | Guo Weilian1,2,3,Niu Pingjuan1,Li Xiaoyun1,Gu Xiao1,He Qingguo2,Feng Zhihong2,Tian Aihua2,Zhang Shilin3,Mao Luhong3 (1.School of Information , Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China,2.Science , Technology on ASIC Laboratory,Shijiazhuang 050051,3.School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China) |
| Abstract: | The terahertz wave is defined as an electromagnetic wave in 100 GHz-10 THz oscillator frequency.The oscillator source operated in this frequency range is suitable to be made by using resonant tunneling devices with high frequency and high speed.Compared with other types of terahertz wave sources,the terahertz wave source with the resonant tunneling device structure has the advantages of small size and light weight,and is easy to integrate with controlled circuit and be modulated by voltage(or current).In ad... |
| Keywords: | terahertz wave terahertz source resonant tunneling device oscillator source millimeter wave |
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