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新型含硅丙烯酸酯型纳米压印胶的研究与应用
引用本文:董会杰,辛忠,陆馨,吕宇皓,王磊.新型含硅丙烯酸酯型纳米压印胶的研究与应用[J].微纳电子技术,2012(9):630-636.
作者姓名:董会杰  辛忠  陆馨  吕宇皓  王磊
作者单位:华东理工大学化学工程联合国家重点实验室;武汉纺织大学化学与化工学院;华中科技大学国家光电实验室
基金项目:上海市科委纳米技术专项资助课题(0652nm001)
摘    要:纳米压印技术因其成本低、产量高的优点广受关注,而开发可适用于纳米压印的压印胶成为该工艺的关键。合成了一种硅含量高的单体三(三甲基硅氧基)甲基丙烯酰氧丙基硅烷(TRIS),制备了一种新型紫外纳米压印用含硅丙烯酸酯型压印胶,用四点弯曲实验机和接触角测试仪表征了压印胶与模板的黏附性能,研究了配方组成对模板黏附性能的影响,优化得到了抗黏附性能优异的配方。压印实验结果表明,该压印胶与模板分离时无粘连。AFM与SEM测试结果表明,压印胶上复制得到了线宽149 nm、周期298 nm、深宽比为1的纳米光栅图形,图形结构完整。

关 键 词:紫外纳米压印  压印胶  含硅丙烯酸酯  抗黏附  表面能

Study and Application of A New Si-Containing Acrylate Resist for Nanoimprinting Lithography
Dong Huijie,Xin Zhong,Lu Xin,Lü Yuhao,Wang Lei.Study and Application of A New Si-Containing Acrylate Resist for Nanoimprinting Lithography[J].Micronanoelectronic Technology,2012(9):630-636.
Authors:Dong Huijie  Xin Zhong  Lu Xin  Lü Yuhao  Wang Lei
Affiliation:1.State Key Laboratory of Chemical Engineering,East China University Science and Technology,Shanghai 200237,China;2.College of Chemical Engineering,Wuhan Textile University,Wuhan 430200,China; 3.National Laboratory of Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China)
Abstract:Nanoimprint lithography(NIL) wins wide attention because of low costs and high throughput.The key factor of NIL is to develop new materials that are better suited as nanoimprint resists.A novel UV-based acrylate resist is prepared by tris(trimethyl siloxy) methacryloxypropylsilane(TRIS).Adhesion properties between the resist and mold were characterized by the four-point bending test and contact angle measurement.The effect of the formulation components on the antiadhesion properties with the mold was studied,and the excellent formulation with the antiadhesion performance was obtained by the optimization.The UV-nanoimprinting experiment shows that the resist is seperated with the mold without adhesion.SEM and AFM results show that transfered nanoscale pattern on the resist with 149 nm line width,298 nm periods and 1 of the depth-to-width ratio are obtained without obvious defects.
Keywords:ultraviolet nanoimprint lithography  resist  Si-containing acrylate  antiadhesion  surface energy
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