| 化合物半导体器件与电路的研究进展 |
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| 引用本文： | 李岚,王阳,李晓岚,邵会民,杨瑞霞.化合物半导体器件与电路的研究进展[J].微纳电子技术,2012(10):650-653. |
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| 作者姓名： | 李岚 王阳 李晓岚 邵会民 杨瑞霞 |
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| 作者单位： | 中国电子科技集团公司第十三研究所;河北工业大学信息工程学院 |
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| 基金项目： | 国家自然基金资助项目(61076004) |
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| 摘 要： | 介绍了GaAs,InP和GaN等几种重要化合物半导体电子器件的特点、应用和发展前景。回顾了GaAs,InP和GaN材料的材料特性及其器件发展历程与现状。分别讨论了GaAs基HEMT由PHEMT渐变为MHEMT结构和性能的变化,GaAs基HBT在不同电路应用中器件的特性,InP基HEMT与HBT的器件结构及工作特性,GaN基HEMT与HBT的器件特性参数。总体而言,化合物半导体器件与电路在高功率和高频电子器件方面发展较快,GaAs,InP和GaN材料所制得的各种器件电路工作在不同的频率波段,其在相关领域发展潜力巨大。
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| 关 键 词： | 砷化镓(GaAs) 磷化铟(InP) 氮化镓(GaN) HEMT HBT |
Research Progress of Compound Semiconductor Devices and ICs |
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| Li Lan,Wang Yang,Li Xiaolan,Shao Huimin,Yang Ruixia.Research Progress of Compound Semiconductor Devices and ICs[J].Micronanoelectronic Technology,2012(10):650-653. |
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| Authors: | Li Lan Wang Yang Li Xiaolan Shao Huimin Yang Ruixia |
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| Affiliation: | 1.The 13th Research Institute,CETC,Shijiazhuang 050051,China; 2.College of Information Engineering,Hebei University of Technology,Tianjin 300130,China) |
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| Abstract: | The characteristics,applications and prospect of GaAs,InP and GaN based compound semiconductor electron devices are introduced.The material character of GaAs,InP and GaN and the development history and status of their devices are reviewed.When the structure of GaAs based HEMT changes from PHEMT into MHEMT,the device character of GaAs based HBT used in different circuits,the device structure and performance characteristic of InP based HEMT and HBT,and device parameters of GaN based HEMT and HBT are discussed,respectively.On the whole,the compound semiconductor devices and circuits are developing fast on the aspect of high power and high frequency electronics.GaAs,InP and GaN based devices and circuits work on different frequency wave bands,and they have great potential in the related application fields. |
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| Keywords: | GaAs InP GaN HEMT HBT |
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