单层硫化钼的研究进展

单层硫化钼(MoS2)是具有直接帯隙1.8 eV的二维半导体,因其特殊的六方晶系层状结构,而具有优异的物理和化学性质。简要介绍了MoS2材料的几种主要制备方法:如高温硫化法、水热法以及表面活性剂促助法等,讨论了各种制备方法在国内外的研究现状及优缺点。给出了单层MoS2在晶体管、集成电路、逻辑运算等方面的一些应用。与硅晶体管相比其晶体管体积更小、更省电,并可减少短通道效应,电流开/关比例高于1010。这些应用说明了其可被广泛应用于未来的纳米电子器件。最后,对MoS2未来的发展方向进行了展望,认为工艺制备方法有待进一步改善,单层MoS2的应用领域也有待进一步深入拓展。

Research Progress of the Single-Layer MoS2

The single-layer molybdenum disulfide(MoS2) is a two-dimensional semiconductor with a direct band gap of 1.8 eV and has excellent physical and chemical properties from its special layered structure of the hexagonal system.Some main preparation methods of MoS2,such as the high-temperature vulcanization method,hydrothermal method and surfactant-assisted method are introduced,and the respective research status,advantages and disadvantages of various methods at home and abroad are discussed.Some applications of the single-layer MoS2,such as transistors,integrated circuits and logic operations are presented.The corresponding transistors have smaller volume and power consumption than that of Si transistors,can decrease the short channel effect,and the on/off current ratio exceeds 1010.All these applications show that MoS2 can be widely used in future nano-electron devices.Finally,the development directions of MoS2 in the future are prospected.The fabrication methods and the application fields of the single-layer MoS2 will be improved and expanded.