| S波段连续波SiC功率MESFET |
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| 引用本文： | 陈昊,潘宏菽,杨霏,霍玉柱,商庆杰,齐国虎,刘志平.S波段连续波SiC功率MESFET[J].微纳电子技术,2011,48(3):155-158. |
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| 作者姓名： | 陈昊 潘宏菽 杨霏 霍玉柱 商庆杰 齐国虎 刘志平 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 摘 要： | 利用国产SiC外延材料和自主开发的SiC器件工艺加工技术,实现了SiC微波功率器件在S波段连续波功率输出大于10W、功率增益大于9dB、功率附加效率不低于35%的性能样管,初步显现了SiC器件在S波段连续波大功率、高增益方面的优势。与以往的硅微波功率器件相比,在同样的频率和输出功率下,SiC微波功率器件的体积不到Si器件的1/7,重量不到Si器件的20%,其功率增益较Si器件提高了3dB以上,器件效率也得到了相应的提高。同时由于SiC微波功率器件的输入、输出阻抗要明显高于Si微波功率器件,在一定程度上可以简化或不用内匹配网络来得到比较高的微波功率增益,这就为器件的小体积、低重量奠定了基础,也为器件的大功率输出创造了条件。
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| 关 键 词： | 碳化硅 功率器件 连续波 内匹配 微波 |
S-Band CW SiC Power MESFETs |
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| Chen Hao,Pan Hongshu,Yang Fei,Huo Yuzhu,Shang Qingjie,Qi Guohu,Liu Zhiping.S-Band CW SiC Power MESFETs[J].Micronanoelectronic Technology,2011,48(3):155-158. |
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| Authors: | Chen Hao Pan Hongshu Yang Fei Huo Yuzhu Shang Qingjie Qi Guohu Liu Zhiping |
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| Affiliation: | Chen Hao,Pan Hongshu,Yang Fei,Huo Yuzhu,Shang Qingjie,Qi Guohu,Liu Zhiping(The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | The SiC MESFET devices were fabricated with the domestic SiC epitaxial materials and self-developed device process.The CW SiC devices show the advantages of high power and high gain,such as more than 10 W CW output power,larger than 9 dB power gain and no less than 35% power-added efficiency at S-band.Compared with the previous Si microwave power devices,the volume of the SiC devices is less than 1/7 and the weight less than 20% of Si devices at the same frequency and output power.The gain of SiC devices in... |
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| Keywords: | silicon carbide(SiC) power device continuous wave(CW) internally-matched microwave |
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