| Si(111)衬底上GaN外延材料的应力分析 |
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| 引用本文： | 尹甲运,刘波,张森,冯志宏,冯震,蔡树军.Si(111)衬底上GaN外延材料的应力分析[J].微纳电子技术,2008,45(12). |
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| 作者姓名： | 尹甲运 刘波 张森 冯志宏 冯震 蔡树军 |
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| 作者单位： | 1. 专用集成电路国家级重点实验室,石家庄,050051
2. 专用集成电路国家级重点实验室,石家庄,050051;哈尔滨工业大学材料科学与工程学院,哈尔滨,150001 |
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| 摘 要： | 对Si(111)衬底上GaN外延材料的应力随着低温AlN插入层数的变化进行了分析研究。通过喇曼散射谱在高频E2(TO)模式下的测试分析发现,随着低温AlN插入层数的增加,GaN材料的E2(TO)峰位逐渐接近体GaN材料的E2(TO)峰位(无应力体GaN材料的E2(TO)峰位为568cm-1),计算得出GaN材料的应力从1.09GPa减小到0.42GPa。同时,使用室温光荧光谱进行了分析验证。结果表明,Si衬底上GaN外延材料受到的是张应力,通过低温AlN插入层技术可以有效降低GaN材料的应力,并且最终实现了表面光亮的厚层无裂纹GaN材料。
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| 关 键 词： | 氮化镓 AlN插入层 喇曼散射 光荧光谱 应力 Si衬底 |
Stress Analysis of GaN Materials Grown on Si(111) Substrates |
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| Yin Jiayun,Liu Bo,Zhang Sen,Feng Zhihong,Feng Zhen,Cai Shujun.Stress Analysis of GaN Materials Grown on Si(111) Substrates[J].Micronanoelectronic Technology,2008,45(12). |
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| Authors: | Yin Jiayun Liu Bo Zhang Sen Feng Zhihong Feng Zhen Cai Shujun |
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| Affiliation: | Yin Jiayun1,Liu Bo1,Zhang Sen1,2,Feng Zhihong1,Feng Zhen1,Cai Shujun1(1.National Key Lab of ASIC,Shijiazhuang 050051,China,2.School of Materials Science , Engineering,Harbin Institute of Technology,Harbin 150001,China) |
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| Abstract: | The stress states of GaN with different numbers of AlN interlayers grown on Si(111) substrates by metal-organic chemical vapor deposition(MOCVD) were investigated.The Raman peak positions in the E2(TO)-high mode of GaN are approach to that of bulk GaN(568 cm-1) with the increase of low-temperature AlN interlayers.The stress of GaN grown on Si substrates was reduced from 1.09 GPa to 0.42 GPa.The reduction of the stress was also confirmed by the room-temperature photoluminescence.These results indicate that t... |
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| Keywords: | GaN AlN interlayer Raman scattering photoluminescence stress Si substrate |
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