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纳/微米ZnO同质结器件的制备及电子学特性研究
引用本文:曹璐,李梦轲,魏强,张威.纳/微米ZnO同质结器件的制备及电子学特性研究[J].微纳电子技术,2007,44(11):985-988,1003.
作者姓名:曹璐  李梦轲  魏强  张威
作者单位:辽宁师范大学,物理与电子技术学院,辽宁,大连,116029
基金项目:中国博士后科学基金;辽宁省教育厅资助项目
摘    要:用低压化学气相沉积法制备了T形和V形纳/微米ZnO同质结,用扫描电子显微镜(SEM)和高倍光学成像显微镜观察了同质结的结构与生长形貌,分析了其结构及生长机理。利用ZnO同质结组装成了纳/微米ZnO同质结器件,分析研究了这些器件的I-V特性,并对I-V特性变化规律进行了分析讨论。

关 键 词:ZnO同质结  器件  电子学特性
文章编号:1671-4776(2007)11-0985-04
修稿时间:2007-06-04

Fabrication and Electrical Characteristics of Nano/Micro ZnO Homojunction Devices
CAO Lu,LI Meng-ke,WEI Qiang,ZHANG Wei.Fabrication and Electrical Characteristics of Nano/Micro ZnO Homojunction Devices[J].Micronanoelectronic Technology,2007,44(11):985-988,1003.
Authors:CAO Lu  LI Meng-ke  WEI Qiang  ZHANG Wei
Affiliation:School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029,China
Abstract:T and V-shaped nano/micro ZnO homojunctions were prepared using low-pressure chemical vapor deposition method.The microstructure and growth topography of these homojunctions were observed by scanning electron microscopy and high-magnification optic microscope,and their structures and the growth mechanisms were analyzed.The nano/micro ZnO homojunction devices were fabricated using ZnO homojunctions.The electrical properties of these devices were examined by I-V measurement at room temperature and the causation of I-V characteristics in these synthesized devices were discussed.
Keywords:ZnO homojunction  devices  electrical characteristics
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