| AlGaN/GaN基HEMT器件的研究进展(英文) |
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| 引用本文： | 邵庆辉,李蓓,叶志镇. AlGaN/GaN基HEMT器件的研究进展(英文)[J]. 微纳电子技术, 2003, 40(2): 10-13,16 |
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| 作者姓名： | 邵庆辉 李蓓 叶志镇 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,浙江,杭州,310027 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 由于AlGaN具有高的击穿电场(3 MV/cm,是GaAs的7.5倍),且在AlGaN/GaN异质结处存在高浓度的极化诱导二维电子气,AlGaN基高电子迁移率晶体管是目前最适合应用于微波大功率放大领域的器件。着重对影响高频大功率AlGaN/GaN性能的材料结构和器件制作进行了阐述。
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| 关 键 词： | AlGaN GaN HEMT 二维电子气 |
Research progress on AlGaN/GaN-based HEMT |
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| Abstract. Research progress on AlGaN/GaN-based HEMT[J]. Micronanoelectronic Technology, 2003, 40(2): 10-13,16 |
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| Authors: | Abstract |
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| Abstract: | The AlGaN high electron mobility transistor is currently the most suitable for high power amplification at microwave frequencies, due to its high breakdown field (3 MV/cm which is 7.5 times that of GaAs) and its enormous polarization induced 2DEG at the AlGaN/GaN heterojunction. In this paper, material structure and device processing issues related to the performance of high-frequency and high-power AlGaN/GaN are discussed. |
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| Keywords: | AlGaN GaN HEMT 2DEG |
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