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GaAs基共振隧穿微加速度计的研究
引用本文:胡杰,薛晨阳,张文栋,熊继军,张斌珍.GaAs基共振隧穿微加速度计的研究[J].微纳电子技术,2007(Z1).
作者姓名:胡杰  薛晨阳  张文栋  熊继军  张斌珍
作者单位:中北大学电子测试技术国家重点实验室 太原030051
摘    要:研究了一种新型的GaAs基压阻式共振隧穿微加速度计结构。该微加速度计的压敏元件采用AlAs/In0.1Ga0.9As双势垒共振隧穿纳米薄膜结构。加速度计的压敏元件和悬臂梁的加工分别利用空气桥工艺和控制孔工艺。对加工出来的加速度计结构进行振动台实验,初步测得传感器的灵敏度为7.6mV/g,线性度为0.16%。

关 键 词:加速度计  共振隧穿薄膜  双空气桥工艺  控制孔工艺

Research of a Micro Accelerometer Based on GaAs Resonant Tunneling Structure
HU Jie,XUE Chen-yang,ZHANG Wen-dong,XIONG Ji-jun,ZHANG Bin-zhen.Research of a Micro Accelerometer Based on GaAs Resonant Tunneling Structure[J].Micronanoelectronic Technology,2007(Z1).
Authors:HU Jie  XUE Chen-yang  ZHANG Wen-dong  XIONG Ji-jun  ZHANG Bin-zhen
Abstract:A novel GaAs piezoresistive accelerometer based on resonant tunneling structure was presented.The sensitive unit was made of AlAs/In0.1Ga0.9As double barriers resonant tunneling thin film.The sensing unit and cantilever beams were successfully fabricated by double air bridges process and control hole process separately.The sensitivity of 7.6 mV/g and the linearty of 0.16% were measured in the vibration experiment.
Keywords:accelerometer  resonant tunneling thin film  double airbridges technique  control hole technique
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