| 纳米尺度压电薄膜PZT的结构特征和性能 |
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| 引用本文： | 李敏,惠春,徐爱兰,汪静,孙建平.纳米尺度压电薄膜PZT的结构特征和性能[J].压电与声光,2007,29(1):68-70. |
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| 作者姓名： | 李敏 惠春 徐爱兰 汪静 孙建平 |
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| 作者单位： | 上海交通大学,微纳科学技术研究院、微米/纳米加工技术国家重点实验室薄膜与微细技术教育部重点实验室,上海,200030 |
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| 基金项目： | 上海市纳米科技专项基金 |
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| 摘 要： | 采用改进的溶胶-凝胶(Sol-Gel)方法在Pt/Ti/SiO2/Si基片上制备锆钛酸铅(PZT)纳米晶薄膜,研究了不同的热处理方式对PZT薄膜的晶粒结构、尺寸及电学性能的影响。X-射线衍射(XRD)分析表明:传统的热处理方式更有利于得到具有一定择优取向性的PZT薄膜。原子力显微镜(AFM)显示:快速热处理方式使PZT薄膜的晶粒具有自形晶结构,晶粒的排布更为有序,从而改善了薄膜的致密性。阻抗分析仪的测试结果表明:经快速热处理的薄膜,漏电流大约比传统热处理处理的薄膜的漏电流降低了20倍左右。
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| 关 键 词： | PZT薄膜 传统热处理 快速热处理 |
| 文章编号： | 1004-2474(2007)01-0068-03 |
| 修稿时间： | 2005-09-13 |
Structure Character and Performance of PZT Thin Film at Nanometer Scale |
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| LI Min,HUI Chun,XU Ai-Lan,WANG Jing,SUN Jian-Ping.Structure Character and Performance of PZT Thin Film at Nanometer Scale[J].Piezoelectrics & Acoustooptics,2007,29(1):68-70. |
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| Authors: | LI Min HUI Chun XU Ai-Lan WANG Jing SUN Jian-Ping |
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| Affiliation: | Institution of Micro and Nano Science and Technology, Shanghai Jiaotong University Key Lab. for Thin Film and Microfabrication of Ministry of Education National Key Lab. of Nano/Micro Fabrication Technology,Shanghai 200030,China |
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| Abstract: | In the paper,the modified Sol-Gel methods are utilized to fabricate PZT thin films on Pt/Ti/SiO2/Si substrate.The crystal structure,dimension and electric performance of PZT thin films are studied at the different annealing methods.The XRD shows that conventional thermal annealing(CTA) is better than rapid thermal annealing(RTA) for the PZT thin films with(110) preferred orientation.But through the AFM,the RTA makes the crystal grain have the automorphic crystal structure,the arrangement of the crystal grain more ordered,and improve the film densification.The leakage current of the PZT thin film after CTA process is the 20 times of the PZT thin film after RTA process by the E4991A testing. |
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| Keywords: | PZT thin films CTA RTA |
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