AlN薄膜体声波谐振器的制备与性能分析

采用直流磁控反应溅射,在Pt电极上沉积了AlN压电薄膜,并制备了以SiO2为声反射层的体声波谐振器。用X-射线衍射(XRD)、电镜扫描(SEM)、原子力显微镜(AFM)测试表明,制备出的AlN薄膜具有高c轴择优取向、良好的柱状晶结构以及平滑的表面;用网络分析仪测试体声波谐振器得到较好的频率特性,即串、并联谐振频率分别为1.22 GHz1、.254 GHz,机电耦合系数为6.68%,带宽20 MHz。

Fabrication and Performance Analysis of AIN Film Bulk Acoustic Resonator

Piezoelectric AlN films were deposited on Pt electrode by direct current magnetron reactive sputtering,on which FBAR with SiO2 as the acoustic reflect cell was fabricated.The XRD,SEM and AFM results show that the AlN films feature highly c-axis-preferred orientation,well-textured columnar structure and smooth surface.The fabricated FBAR measured by network analyzer exhibits significant frequency performance: the series and parallel resonant frequency are 1.22 GHz and 1.254 GHz respectively.The effective electromechanical coupling coefficient is 6.68% and the bandwidths is 20 MHz.