| Sol—Gel方法制备掺Y PZT铁电薄膜材料的研究 |
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| 引用本文： | 余大年,刘梅冬.Sol—Gel方法制备掺Y PZT铁电薄膜材料的研究[J].压电与声光,1997,19(1):50-53. |
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| 作者姓名： | 余大年 刘梅冬 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 摘 要： | 介绍用Ｓｏｌ－Ｇｅｌ方法制备掺ＹＰＺＴ（ＰＹＺＴ）铁电薄膜的工艺，并比较了ＰＺＴ和ＰＹＺＴ薄膜的性能参数。实验结果表明，掺Ｙ后使ＰＺＴ铁电薄膜的性能得到改善
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| 关 键 词： | 铁电薄膜 掺杂 压电铁电材料 |
Study of Y dopped PZT Ferroelectric Thin Films Prepared by Sol Gel Method |
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| Yu Danian,Liu Meidong,Zeng Yike Wang Peiying Rao Yunhua,Li Churong.Study of Y dopped PZT Ferroelectric Thin Films Prepared by Sol Gel Method[J].Piezoelectrics & Acoustooptics,1997,19(1):50-53. |
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| Authors: | Yu Danian Liu Meidong Zeng Yike Wang Peiying Rao Yunhua Li Churong |
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| Abstract: | This paper introduced the process of preparing Y dopped PZT ferroelectric thin films by Sol Gel method.and compared the properties of PZT thin films with that of PYZT thin films.The experimental results show that Y dopped make the improvement of properties of PZT ferroelectric thin films. |
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| Keywords: | ferroelectric thin film Sol Gel method Y dopped PZT |
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