压电薄膜特性参数的测量方法

随着电子元器件向微型、高灵敏、集成等方向发展,薄膜材料及器件在微机电(MEMS)系统中得到广泛应用,而测量压电薄膜特性参数的方法与体材料相比有很大的不同.介绍了当前测量压电薄膜特性参数的两大类方法:直接测量法(包括气腔压力法、悬臂梁法、激光干涉法和激光多普勒振动法)和间接测量法(传统阻抗分析法),详细分析了这些方法的基本原理、测试表征、应用状况及存在的问题,比较了这些方法的优缺点,并对未来压电薄膜特性参数的测试表征作了展望.

Measurement Methods for Piezoelectric Coefficient of Piezoelectric Thin Films

Film materials and devices have been widely used in micro-electromechanical system (MEMS) system with the development of micromation, high sensitivity and integration of electronic devices. But the measurement methods for piezoelectric properties of piezoelectric thin films are very different from those of bulk materials. Two categories of measuring piezoelectric properties of piezoelectric thin films were introduced in this paper: direct measurement(including pneumatic pressure rig, cantilever method, laser interferometer method and laser Doppler vibrometer method)and indirect measurement(conventional impedance analyzer).The basic principle, measurement characterization, application status and problems were all illustrated in this paper, the advantages/disadvantages of these techniques were compared for piezoelectric applications and the future development of measurement characterization of piezoelectric thin films were predicted.