| 高性能Si基MOS肖特基二极管式氢气传感器研究 |
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| 引用本文： | 钟德刚,徐静平.高性能Si基MOS肖特基二极管式氢气传感器研究[J].压电与声光,2004,26(2):106-108. |
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| 作者姓名： | 钟德刚 徐静平 |
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| 作者单位： | 华中科技大学,电子科学与技术系,武汉,430074 |
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| 基金项目： | 湖北自然科学基金资助项目(2000J158) |
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| 摘 要： | 报道了采用NO直接氧化制备氮化氧化物作为绝缘层制备高性能Si基MOS肖特基二极管式气体传感器(SDS)的技术。实验结果显示，MOS肖特基二极管式气体传感器具有高的响应灵敏度和好的响应重复性，可以探测浓度约为10^-6的氢气。因此，采用NO直接氧化法制备绝缘层是一种制备高可靠、高灵敏度Si基MOS SDS的技术。
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| 关 键 词： | 肖特基二极管 氢气传感器 氧化氮 氮化氧化物 |
| 文章编号： | 1004-2474(2004)02-0106-03 |
| 修稿时间： | 2002年11月21 |
High Performance of Si-based Schottky Diode Hydrogen Sensor |
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| ZHONG De-gang,XU Jing-ping.High Performance of Si-based Schottky Diode Hydrogen Sensor[J].Piezoelectrics & Acoustooptics,2004,26(2):106-108. |
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| Authors: | ZHONG De-gang XU Jing-ping |
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| Abstract: | Fabrication of high performance platinum/Oxynitride/silicon (MOS) Schottky diode is presented. Direct oxidation in NO gas is successfully applied for the insulator. The interface properties of device have been improved due to nitrogen incorporation in the insulator. A rapid and stable response upon the introduction and removal of H_2/N_2 mixed gas can be realized for the sensor. It has excellent response characteristics and high recoveries. And Tens-ppm of hydrogen can be detected. So direct oxidation in NO gas for insulator is an effect technology to fabricate high reliability and high sensitivity MOS Schottky diode hydrogen gas sensor. |
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| Keywords: | schottky diode hydrogen sensor NO oxynitride |
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