| 四价添加剂掺杂ZnO压敏电阻器的性能 |
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| 引用本文： | 姚银华,曹全喜,邹青文.四价添加剂掺杂ZnO压敏电阻器的性能[J].压电与声光,2012,34(6):868-871. |
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| 作者姓名： | 姚银华 曹全喜 邹青文 |
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| 作者单位： | 西安电子科技大学技术物理学院,陕西西安,710071 |
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| 摘 要： | 基于理论研究的结果,用固相法研究了四价添加剂对ZnO压敏电阻器性能的影响和作用机理.结果表明,优选的四价添加剂掺杂能有效降低ZnO晶粒的电阻率和残压比;通过提高晶界氧的电离度,可使晶界势垒高度上升,提高了ZnO的压敏电压梯度.
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| 关 键 词： | 压敏电阻器 电压梯度 残压比 |
Performance of ZnO Varistor with Tetravalent Additive |
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| YAO Yinhu,CAO Quanxi and ZOU Qingwen.Performance of ZnO Varistor with Tetravalent Additive[J].Piezoelectrics & Acoustooptics,2012,34(6):868-871. |
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| Authors: | YAO Yinhu CAO Quanxi and ZOU Qingwen |
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| Abstract: | Based on the results of theoretical study, the effects and mechanisms of tetravalent additives on ZnO varistor were studied by solid state reaction. The results reveal that the preferred tetravalent additive can reduce the resistivity and residual voltage ratio of ZnO grain. The breakdown voltage gradient of ZnO and the height of grain boundary barrier can be improved by raising the ionization degree of oxygen on the grain boundary. |
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| Keywords: | varistor voltage gradient residual voltage ratio |
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