| P型TiOx半导体薄膜的特性研究与制备 |
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| 引用本文： | 赵大庆,李岩,杨锋.P型TiOx半导体薄膜的特性研究与制备[J].压电与声光,2004,26(3):214-217. |
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| 作者姓名： | 赵大庆 李岩 杨锋 |
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| 作者单位： | 清华大学,机械工程系,北京,100084 |
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| 摘 要： | TiO2陶瓷在射频溅射过程中表面成分发生改变，变化后的陶瓷表面具有良好的导电性，可作为靶材采用直流溅射法在玻璃基片上制备TiO2薄膜，发现当工作气体中不通O2时溅射得到的TiO2薄膜由于氧缺位呈N型导电，而当预先在玻璃衬底上沉积一层金属Ti时TiO2薄膜的导电类型发生了转变，由N型导电转向P型导电，该文对这一现象进行了研究，并讨论了钛层厚度和真空退火条件对薄膜P型导电性质的影响。
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| 关 键 词： | TiOx 薄膜 直流磁控溅射 P型 |
| 文章编号： | 1004-2474(2004)03-0214-04 |
| 修稿时间： | 2003年7月31日 |
Preparation and Properties of P-type Conducting Titanium Oxide Film |
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| ZHAO Da-qing,LI Yan,YANG Feng.Preparation and Properties of P-type Conducting Titanium Oxide Film[J].Piezoelectrics & Acoustooptics,2004,26(3):214-217. |
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| Authors: | ZHAO Da-qing LI Yan YANG Feng |
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| Abstract: | When the composition of TiO_2 ceramic changed in the RF magnetron sputtering, the surface of changed ceramic conducts well, which can be used as target to prepare TiO_2 film by DC magnetron sputtering. When no O_2 was introduced into the working atmosphere, we found the film behaves N-type electrical conduction because of O vacancy. While we deposited Ti layer on glass substrate in advance, the conductive property of the film changed to P-type electrical conduction. This paper made research on this phenomenon, and discussed the effects of Ti layer thickness, vacuum annealing conditions' on the P-type conductive properties of the film. |
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| Keywords: | TiO_x film DC magnetron sputtering P-type |
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