| 掺钽的二氧化钛电容—压敏陶瓷电学性能研究 |
| |
| 引用本文： | 李长鹏,王矜奉,陈洪存,苏文斌,钟维烈,张沛霖.掺钽的二氧化钛电容—压敏陶瓷电学性能研究[J].压电与声光,2001,23(2):113-115,123. |
| |
| 作者姓名： | 李长鹏 王矜奉 陈洪存 苏文斌 钟维烈 张沛霖 |
| |
| 作者单位： | 山东大学物理系, |
| |
| 基金项目： | 山东省自然科学基金资助项目 |
| |
| 摘 要： | 通过对样品I-V特性和势垒高度等参数的测定，研究了钽对二氧化钛压敏电阻电学性能的影响。研究中发现掺入的x(Ta
|
| 关 键 词： | 压敏材料 二氧化钛 电学性能 掺钽 |
| 文章编号： | 1004-2474(2001)02-0113-03 |
Investigation of TiO_2.Ta_2O_5 Capacitor-varistor Ceramics |
| |
| LI Chang-Peng,WANG Jin-feng,CHEN Hong-cun,SU Wen-bin,ZHONG WEI-LIE,ZHANG Pei-lin.Investigation of TiO_2.Ta_2O_5 Capacitor-varistor Ceramics[J].Piezoelectrics & Acoustooptics,2001,23(2):113-115,123. |
| |
| Authors: | LI Chang-Peng WANG Jin-feng CHEN Hong-cun SU Wen-bin ZHONG WEI-LIE ZHANG Pei-lin |
| |
| Abstract: | By measuring the properties of I-V and the borndary.defect barriers,the electrical properties of TiO2 based ceramics with various Ta2O5 dopants were investigated.It was found that an optimal doping composition of 99.75%TiO2·0.25%Ta2O5 shows low breakdown voltage of 6 V/mm.high nonlinear constant of 8.8 and ultrahigh electrical permittivity of 6.2×104(measured at 1 kHz),which is consistent with the highest and narrowest boundary barriers of the sample.The characteristics of the ceramics can be explained by the effect and the maximum of the substitution of Ta5+ for Ti4+.In order to illustrate the grain boundary barriers formation in TiO2·Ta2O5 varistors,an interface defect barrier model was also introduced. |
| |
| Keywords: | varistors TiO 2 electrical properties defect barrier model |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
