| 薄膜体声波谐振器(FBAR)技术及其应用 |
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| 引用本文： | 何杰,刘荣贵,马晋毅.薄膜体声波谐振器(FBAR)技术及其应用[J].压电与声光,2007,29(4):379-382,385. |
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| 作者姓名： | 何杰 刘荣贵 马晋毅 |
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| 作者单位： | 四川压电与声光技术研究所,重庆,400060 |
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| 摘 要： | 薄膜体声波器件具有体积小,成本低,品质因数(Q)高,功率承受能力强,频率高且与IC技术兼容等特点,适合于工作在1~10 GHz的RF系统应用,有望在未来的无线通讯系统中取代传统的声表面波(SAW)器件和微波陶瓷器件。该文综合阐述了薄膜体声波技术的基本原理、最新发展及应用。分析了FBAR器件的三种结构及其制作方法。还简要讨论了薄膜体声波技术的未来发展趋势及面临的挑战。
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| 关 键 词： | 薄膜体声波谐振器 Q值 功率承受能力 高频应用 IC技术 |
| 文章编号： | 1004-2474（2007）04-0379-04 |
| 修稿时间： | 2007-06-06 |
Thin Film Bulk Acoustic Resonator (FBAR) Technology and Its Applications |
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| HE Jie,LIU Rong-gui,MA Jin-yi.Thin Film Bulk Acoustic Resonator (FBAR) Technology and Its Applications[J].Piezoelectrics & Acoustooptics,2007,29(4):379-382,385. |
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| Authors: | HE Jie LIU Rong-gui MA Jin-yi |
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| Affiliation: | Sichuan Institute of Piezoelectric and Acousto-optic Technology, Chongqing 400060, China |
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| Abstract: | The thin film bulk acoustic wave devices have the features of small size,low cost,high Q-value,high power handling capability and application of high frequencies and compatibility with IC-technology.They can be used advantageously in RF system operating between 1and 10 GHz.They are expected to replace traditional SAW devices and microwave ceramic devices in the future wireless communication system.This paper presents an overview of the principle of FBAR technology and its new development and applications.Three device structures and their fabrications were analyzed.A brief discussion of the future trends and challenges of FBAR technology is also described. |
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| Keywords: | FBAR Q-value power handling capability application of high frequencies IC-technology |
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