| SnO_2压敏材料势垒电压的测量 |
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| 引用本文： | 王勇军,王矜奉,陈洪存,董火民,张沛霖,钟维烈,赵连义.SnO_2压敏材料势垒电压的测量[J].压电与声光,2000(3). |
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| 作者姓名： | 王勇军 王矜奉 陈洪存 董火民 张沛霖 钟维烈 赵连义 |
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| 作者单位： | 山东大学物理系!济南250100(王勇军，王矜奉，陈洪存，董火民，张沛霖，钟维烈)，山东省防雷中心!济南250100(赵连义) |
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| 基金项目： | 山东省自然科学基金资助项目 |
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| 摘 要： | 依照缺陷势垒模型 ,将压敏电阻器视为双向导通的二极管 ,应用半导体理论对低电压情况下的电流 -电压关系数据进行了处理 ,得到了 Sn O2 - Zn O- Nb2 O5压敏材料的势垒电压。选取的 4个测量温度得到的结果是相同的 ,保证了实验结果的正确性。
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| 关 键 词： | 压敏电阻 缺陷势垒模型 势垒电压 热激发 |
The Barrier Voltage Measurement of SnO_2 Varistor |
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| WANG Yong jun ,WANG Jin feng ,CHEN Hong cun ,DONG Huo min ,ZHANG Pei lin ,ZHONG Wei lie ,ZHAO Lian yi.The Barrier Voltage Measurement of SnO_2 Varistor[J].Piezoelectrics & Acoustooptics,2000(3). |
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| Authors: | WANG Yong jun WANG Jin feng CHEN Hong cun DONG Huo min ZHANG Pei lin ZHONG Wei lie ZHAO Lian yi |
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| Affiliation: | WANG Yong jun 1,WANG Jin feng 1,CHEN Hong cun 1,DONG Huo min 1,ZHANG Pei lin 1,ZHONG Wei lie 1,ZHAO Lian yi 2 |
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| Abstract: | The semiconductor theory about the conduction of zener diode was applied to the SnO 2 ZnO 2 Nb 2O 5 varistor since it is analogous to two back to back diodes according to the defect barrier model.The current voltage characteristics were measured at the low voltage region.The values of the barrier voltage were determined by the interception of the I V plot.The measurement was carried out at different temperatures and identical results were obtained. |
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| Keywords: | varistor defect barrier model barrier voltage thermal emission |
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