| 2.8 GHz薄膜体声波谐振器的研究 |
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| 引用本文： | 江洪敏,马晋毅,汤劲松,周勇,毛世平,于新晓,刘积学.2.8 GHz薄膜体声波谐振器的研究[J].压电与声光,2010,32(1). |
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| 作者姓名： | 江洪敏 马晋毅 汤劲松 周勇 毛世平 于新晓 刘积学 |
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| 作者单位： | 四川压电与声光技术研究所,重庆,400060 |
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| 摘 要： | 通过采用微机电系统(MEMS)和微声电子方法,研究了硅基片上横膈膜结构薄膜体声波谐振器(FBAR).器件的串联谐振频率f_s＝2.75 GHz,并联谐振频率f_p＝2.8 GHz,插入损耗IL=-3.7 dB,并联谐振频率品质因子Q_p=260,有效机电耦合系数K_(eff)~2=4.5%.
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| 关 键 词： | 薄膜体声波谐振器 横膈膜 微机电系统 |
Study on 2.8 GHz Thin Film Bulk Acoustic Resonator |
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| JIANG Hong-min,MA Jin-yi,TANG Jin-song,ZHOU Yong,MAO Shi-ping,YU Xin-xiao,LIU Ji-xue.Study on 2.8 GHz Thin Film Bulk Acoustic Resonator[J].Piezoelectrics & Acoustooptics,2010,32(1). |
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| Authors: | JIANG Hong-min MA Jin-yi TANG Jin-song ZHOU Yong MAO Shi-ping YU Xin-xiao LIU Ji-xue |
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| Affiliation: | JIANG Hong-min,MA Jin-yi,TANG Jin-song,ZHOU Yong,MAO Shi-ping,YU Xin-xiao,LIU Ji-xue (Sichuan Institute of Piezoelectric , Acoustooptic Technology,Chongqing 400060,China) |
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| Abstract: | A thin film bulk acoustic resonator(FBAR)fabricated on Si substrate with membrane structure by MEMS and micro-electro-acoustic technologies was studied.The tested device has a series resonant frequency f_s of 2.75 GHz and a parallel resonant frequency f_p of 2.8 GHz.The insertion loss of-3.7 dB,the parallel resonant frequency quality factor(Q) of 260 and the efficient electromechanical coupling factor K_(eff)~2 of 4.5%have been achieved. |
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| Keywords: | thin film bulk acoustic resonator membrane MEMS |
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