| 论碲镉汞光电二极管的暗电流(下) |
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| 引用本文： | 王忆锋,毛京湘,刘黎明,王丹琳.论碲镉汞光电二极管的暗电流(下)[J].红外,2012,33(9):6-13. |
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| 作者姓名： | 王忆锋 毛京湘 刘黎明 王丹琳 |
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| 作者单位： | 昆明物理研究所,云南昆明,650223 |
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| 摘 要： | 对于工作在1～30 μm波段的各种红外光电探测器来说,碲镉汞(MercuryCadmium Telluride,MCT)已经成为最重要的一种半导体材料.为了获得最优的性能,MCT探测器的暗电流必须降至最小.主要根据近年来的部分英文文献,从基本概念入手,介绍了有关MCT光电二极管暗电流研究的发展情况,并讨论了对于MCT光电二极管暗电流有关问题的理解和体会.
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| 关 键 词： | 碲镉汞 光电二极管 红外探测器 暗电流 |
| 收稿时间： | 2012/4/22 |
On the Dark Current in Mercury Cadmium Telluride Photodiodes (II) |
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| WANG Yi-feng
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MAO Jing-xiang
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LIU Li-ming
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WANG Dan-lin.On the Dark Current in Mercury Cadmium Telluride Photodiodes (II)[J].Infrared,2012,33(9):6-13. |
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| Authors: | WANG Yi-feng MAO Jing-xiang LIU Li-ming WANG Dan-lin |
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| Affiliation: | (Kunming Institute of Physics,Kunming 650223,China) |
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| Abstract: | For various infrared photoelectric detectors operating in the wavelength region from 1 m to 30 m, mercury cadmium telluride (MCT) has become the most important semiconductor material. To obtain the best performance, the dark current in the MCT detectors must be minimized. By summarizing and analyzing the related references published in recent years, the progress of the research on MCT dark current is presented and the understanding and comprehension of the dark current in MCT photodiodes are discussed. |
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| Keywords: | mercury cadmium telluride photodiode infrared detector dark current |
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