大直径高质量锑化铟单晶的生长研究

锑化铟单晶是制备3μm～5μm红外探测器的重要材料.为了适应红外焦平面探测器大规模化发展的趋势,我们开展了高质量3in锑化铟单晶的生长研究.本文解决了大直径锑化铟单晶生长的关键技术,讨论了3in锑化铟单晶生长过程中的多晶原料提纯问题,以及单晶电性能参数控制、位错密度控制和直径控制问题,并采用Czochraski法成功地在国内首次生长出直径为3in的锑化铟单晶.其中,直径大于3in的单晶长度超过100mm,单晶的位错密度小于100cm-2.试验结果表明:相对于其他半导体单晶生长位错密度沿晶棒增大的分布规律,我们得到的锑化铟单晶位错密度沿晶棒从头至尾递减,单晶尾部位错密度可小于50cm-2;同时单晶的电子迁移率、载流子浓度均满足制备高性能大规格红外焦平面探测器的要求.

Growth Study of Large High-quality InSb Single Crystal

InSb crystal is an important material for infrared detectors opearating in the wavelength range of 3μm ~ 5f1m. To adapt the development trend of infrared focal plane detectors in large fomat, the growth of high-quality InSb single crystal with a diameter of 3in is studied. In this paper, the key growth technology of the InSb single crystal with a large diameter is solved; the problems such as the purification of polycrystalline InSb and the control of the electric parameter, dislocation density and diameter of single crystal during growth are discussed; and the InSb single crystal with a diameter of 3in is grown by using the Czochralski method 且rstly in China. The crystal ha启a length greater than 100mm and a dislocation density of 100cm-2. The testing result shows that compared with other semiconductor single crystal of which the dislocation density is increased along its ingot, the dislocation density of our single crystal is descreased from one end to other end along its ingot. The dislocation density at the tail end is less than 50cm-2. The carrier concentration and mobility ofthe crystal can meet the requirements for fabricating large format infrared focal plane detectors.