| 介孔组装半导体量子点的研究进展 |
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| 引用本文： | 包健,沈悦,邓惠勇,戴宁.介孔组装半导体量子点的研究进展[J].红外,2006,27(9):34-38. |
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| 作者姓名： | 包健 沈悦 邓惠勇 戴宁 |
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| 作者单位： | 中国科学院上海技术物理研究所,上海,200083 |
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| 摘 要： | 近年来,由于主客体效应,以多孔二氧化硅作为反应容器组装单分散的半导体量子点引起了人们很大的兴趣。本文主要介绍了介孔二氧化硅的基本概念及其制备方法、机理以及介孔组装半导体量子点这一新学科的研究状况,并展望了它的发展前景。
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| 关 键 词： | 多孔二氧化硅 组装 量子点 |
| 文章编号： | 1672-8785（2006）09-0034-05 |
| 收稿时间： | 2006-04-10 |
| 修稿时间： | 2006-04-10 |
Advance in Research on Impregnating Semiconductor Quantum Dots |
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| BAO Jian,SHEN Yue,DEN Hui-yong,DAI Ning.Advance in Research on Impregnating Semiconductor Quantum Dots[J].Infrared,2006,27(9):34-38. |
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| Authors: | BAO Jian SHEN Yue DEN Hui-yong DAI Ning |
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| Affiliation: | Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | In recent years,because of the particle-sieving effect of mesoporous silica,more interests have been shown in the utilization of the pores of mesoporous materials as nanoreactors so as to synthesize monodispersive nanocrystals with a uniform size.In this paper,the current research on the basic concept, synthesis method and mechanism of impregnating silica and the impregnation semiconductors inside the mesoporous channels are presented.Finally,the research trend is shown. |
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| Keywords: | mesoporous silica incorporation quantum dots |
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