| 分子束外延InSb薄膜材料的表面微观形貌研究 |
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| 引用本文： | 周朋,刘铭.分子束外延InSb薄膜材料的表面微观形貌研究[J].红外,2017,38(2):7-10. |
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| 作者姓名： | 周朋 刘铭 |
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| 作者单位： | 华北光电技术研究所,华北光电技术研究所 |
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| 摘 要： | 用原子力显微镜等方法研究了在InSb (001)衬底和(001)偏(111)B面2°衬底上分子束外延生长的同质外延薄膜和掺Al薄膜样品表面的微观形貌。对比了不同衬底同质外延时生长模式的差异，并观察了加入Al后引入的交叉影线，分析了其产生的原因。研究表明，使用有偏角的衬底更有利于减少分子束外延薄膜的表面缺陷。
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| 关 键 词： | InSb薄膜材料 原子力显微镜 微观形貌 衬底偏角 |
| 收稿时间： | 2016/11/15 0:00:00 |
| 修稿时间： | 2016/11/29 0:00:00 |
Study of Microtopography of InSb Film Grown by Molecular Beam Epitaxy |
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| ZHOU Peng and LIU Ming.Study of Microtopography of InSb Film Grown by Molecular Beam Epitaxy[J].Infrared,2017,38(2):7-10. |
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| Authors: | ZHOU Peng and LIU Ming |
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| Affiliation: | 11th Institution of China Electronics Technology Group Corporation,11th Institution of China Electronics Technology Group Corporation |
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| Abstract: | The microtopography of homoepitaxial and Al-doped thin films grown on InSb (001) substrates and (001) misoriented by 2°(111) B substrates by Molecular Beam Epitaxy (MBE) was studied by Atomic Force Microscopy (AFM). The differences of the growing modes of homoepitaxial films on different substrates were compared. The crosshatch introduced after Al was added into InSb films was observed and its cause was analyzed. The research showed that the use of misoriented substrates was more favorable to the reduction of surface defects of InSb films grown by MBE. |
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| Keywords: | InSb film AFM micro topography misoriented substrate |
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