| 短/中波双色碲镉汞红外探测器制备研究 |
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| 引用本文： | 王经纬,李忠贺,高达,邢艳蕾,王成刚.短/中波双色碲镉汞红外探测器制备研究[J].红外,2021,42(2):1-7. |
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| 作者姓名： | 王经纬 李忠贺 高达 邢艳蕾 王成刚 |
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| 作者单位： | 华北光电技术研究所焦平面事业部,华北光电技术研究所焦平面事业部,华北光电技术研究所焦平面事业部,华北光电技术研究所焦平面事业部,华北光电技术研究所焦平面事业部 |
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| 摘 要： | 报道了基于分子束外延的短/中波双色碲镉汞材料及器件的最新研究进展。采用分子束外延方法制备出了高质量的短/中波双色碲镉汞材料,并通过提高材料质量将其表面缺陷密度控制在300 cm-2以内。在此基础上进一步优化了芯片制备工艺,尤其是在减小像元中心距方面作了优化。基于上述多项材料及器件工艺制备出了320×256短/中波双色碲镉汞红外探测器组件。结果表明,该组件的测试性能及成像效果良好。
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| 关 键 词： | 碲镉汞 短/中波双色 红外探测器 分子束外延 |
| 收稿时间： | 2020/9/16 0:00:00 |
| 修稿时间： | 2020/9/26 0:00:00 |
Research on Fabrication of SW/MW Dual-band MCT Infrared Detectors |
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| Wang Jing-wei,Li Zhong-he,Xing Yan-lei,Gao Da and Wang Cheng-gang.Research on Fabrication of SW/MW Dual-band MCT Infrared Detectors[J].Infrared,2021,42(2):1-7. |
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| Authors: | Wang Jing-wei Li Zhong-he Xing Yan-lei Gao Da and Wang Cheng-gang |
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| Affiliation: | Focal Plane Arrays Department,North China Research Institute of Electro-Optics,Focal Plane Arrays Department,North China Research Institute of Electro-Optics,Focal Plane Arrays Department,North China Research Institute of Electro-Optics,Focal Plane Arrays Department,North China Research Institute of Electro-Optics,Focal Plane Arrays Department,North China Research Institute of Electro-Optics |
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| Abstract: | The latest research progress of SW/MW dual-band mercury cadmium telluride (MCT) materials and devices based on molecular beam epitaxy (MBE) is reported. High-quality SW/MW dual-band MCT materials are grown by the MBE method, and the surface defect density is controlled below 300 cm-2 by improving the material quality. On this basis, the chip fabrication process is further optimized, especially in terms of reducing the pixel pitch. A 320×256 SW/MW dual-band MCT infrared detector assembly is fabricated based on the above-mentioned various material and device processes. The results show that the test performance and imaging effect of the assembly are good |
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| Keywords: | HgCdTe SW/MW dual-band infrared detector molecular beam epitaxy |
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