An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K |
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Authors: | V I Zubkov O V Kucherova I N Yakovlev A V Solomonov |
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Affiliation: | 1.St. Petersburg State Electrotechnical University LETI,St. Petersburg,Russia |
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Abstract: | An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light-emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of parameters over the wafer. The setup includes the closed-cycle helium cryogenic station, LCR meter, and temperature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light-emitting diodes, are presented. |
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