线阵碲镉汞探测器致损单元反常响应机理研究

分别对p-i-n和n-i-p两种结构的硅基光电探测器的背面离子注入层进行激光退火处理,辐照功率分别为0.5、1、1.25和1.5J/cm~2。根据激光退火激活载流子模式计算了载流子激活率,获得了载流子浓度和接触电阻的变化量。通过对比器件的电学和光学性能,发现采用1.5J/cm~2的激光,离子注入方式得到的硼离子和磷离子的激活率达到75.0%和92.6%,使得p-i-n和n-i-p结构器件的背接触电阻分别从未退火的22.3Ω和15.89Ω降低至7.32Ω和7.63Ω,显著改善了硅基光电探测器的正向特性。在100mV反向偏压下激光退火至少降低了10%的暗电流,并增强p-i-n结构峰值处约1%的光谱响应和n-i-p结构峰值处约5%的光谱响应。 更多还原

Study on Abnormal Response Mechanism of the Damaged Cell on HgCdTe Linear Arrya Detector

PV linear array HgCdTe detector is radiated by 1064nm picoseconds pulse laser. With increasing laser energy, the detection unit presents various damages and it presents abnormal response of damage unit. It is found that the response range has blue shift of the damage unit, and the response sensitivity of damage unit on laser with wavelength of 1064nm increases. The results show that the damaged unit p-type HgCdTe layer presenting Hg precipitation will result in composition change of both damaged photosensitive HgCdTe material and carrier concentration. The pn equivalent resistance changes due to the change of depletion layer width, which are the main factors resulting in abnormal response of chip damage unit. It is found that damaged photosensitive element increases, and width of energy band and forbidden band of HgCdTe material increases as HgCdTe material composition, which makes detector response range have blue shift and it is also the main reason for the damage unit presenting more sensitive response to 1064nm laser.