| 钝化材料对深紫外LED器件性能的影响 |
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| 引用本文： | 陈文欣,钟志白,韩彦军,罗毅,梁兆煊.钝化材料对深紫外LED器件性能的影响[J].半导体光电,2013,34(5):799-803. |
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| 作者姓名： | 陈文欣 钟志白 韩彦军 罗毅 梁兆煊 |
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| 作者单位： | 1.厦门市三安光电科技有限公司，福建 厦门 361009;2.清华大学 电子工程系 集成光电子学国家重点实验室/清华信息科学与技术国家实验室(筹)，北京 100084;厦门市三安光电科技有限公司，福建 厦门 361009;清华大学 电子工程系 集成光电子学国家重点实验室/清华信息科学与技术国家实验室(筹)，北京 100084;清华大学 电子工程系 集成光电子学国家重点实验室/清华信息科学与技术国家实验室(筹)，北京 100084;清华大学 电子工程系 集成光电子学国家重点实验室/清华信息科学与技术国家实验室(筹)，北京 100084 |
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| 摘 要： | 对比研究了SiO2、聚酰亚胺薄膜、SiNx/旋涂玻璃(SOG)复合材料等钝化材料对倒装焊深紫外LED器件抑制漏电流恶化、改善器件可靠性的作用。实际测试结果表明,未钝化和采用SiO2、聚酰亚胺、SiNx/SOG复合钝化膜后,倒装焊紫外LED短路漏电比例分别为100%、100%、55%和18%,采用聚酰亚胺和SiNx/SOG复合钝化膜的器件点亮1 000h后光衰分别为67%和20%。分析表明,SiNx与SOG结合使用有效降低了表面电荷复合几率并改善了倒装焊短路问题;SOG还进一步降低了表面的粗糙度,改善了由于AlGaN外延表面上的深凹槽结构引起的器件漏电及倒装焊金属溢流的短路,从而大大提高了可靠性。
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| 关 键 词： | 深紫外发光二极管 钝化层 SOG 漏电 短路 |
| 收稿时间： | 4/4/2013 12:00:00 AM |
Effects of Passivation Materials on Performance of Deep Ultraviolet LEDs |
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| CHEN Wenxin;ZHONG Zhibai;HAN Yanjun;LUO Yi;LIANG Zhaoxuan.Effects of Passivation Materials on Performance of Deep Ultraviolet LEDs[J].Semiconductor Optoelectronics,2013,34(5):799-803. |
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| Authors: | CHEN Wenxin;ZHONG Zhibai;HAN Yanjun;LUO Yi;LIANG Zhaoxuan |
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| Affiliation: | CHEN Wenxin;ZHONG Zhibai;HAN Yanjun;LUO Yi;LIANG Zhaoxuan;Sanan Optoelectronics Co.,Ltd;National Key Lab.of Integrated Optoelectronics/Tsinghua National Lab.for Information Science and Technology,Department of Electronic Engineering,Tsinghua University;NationalKey Lab.of Integrated Optoelectronics/Tsinghua National Lab.for Information Science and Technology,Department of Electronic Engineering,Tsinghua University; |
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| Abstract: | The effects of silicon dioxide (SiO2), polyimide, silicon nitride (SiNx)/spin-on-glass (SOG) layer on the current leakage and the stabilities of deep ultraviolet LEDs were studied. The results show that for LEDs with no passivation, or with SiO2 layer, polyimide layer and SiNx/SOG layers, the leakage ratio is 100%, 100%, 55% and 15%, respectively. After the burn-in time exceeds 1,000 hours under stress test condition, theoptical power degradation of the latter two types is 67% and 20%, respectively. The analysis shows that the application of the SiNx/SOG passivation can both reduce the surface charge recombination rate and alleviate electrode shorts during flip chip bonding. In addition, the ability of SOG to planarize rough surface has reduced electrode shorts and surface leakage resulted from pits and bumps of the epitaxial AlGaN layer, therefore, the performance and lifetime of deep ultraviolet LEDs are improved dramatically. |
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| Keywords: | deep UV LED passivation layer SOG leakage short circuit |
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