| 超晶格光伏效应的温度特性 |
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| 引用本文： | 朱文章.超晶格光伏效应的温度特性[J].半导体光电,1992,13(2):165-169. |
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| 作者姓名： | 朱文章 |
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| 作者单位： | 厦门大学物理系，厦门大学物理系 厦门 361005，厦门 361005 |
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| 摘 要： | 在18～300K 度范围内测量了 GaAs/AlGaAs 超晶格和 Ge_xSi_(1-x)/Si 应变层超晶格在不同温度下的光伏谱。在200K 以下,在 GaAs/AlGaAs 超晶格中观测到6个子带间光跃迁激子峰;在100K 以下,GaAs/AlGaAs 的光伏谱反映了超晶格台阶状态密度分布。在 Ge_xSi_1-x/Si 应变层超晶格中,观测到子带和连续带间的光跃迁。并对两类超晶格的光伏特性进行了比较分析。
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| 关 键 词： | 超晶格 光伏谱 光跃迁 GaAs／AlGaAs |
Temperature Dependence of Photovoltaic Effect in Superlattice |
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| Zhu Wenzhang Shen Qihua Dept.of Physics,Xiamen University Xiamen.Temperature Dependence of Photovoltaic Effect in Superlattice[J].Semiconductor Optoelectronics,1992,13(2):165-169. |
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| Authors: | Zhu Wenzhang Shen Qihua Deptof Physics Xiamen University Xiamen |
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| Affiliation: | Zhu Wenzhang Shen Qihua Dept.of Physics,Xiamen University Xiamen 361005 |
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| Abstract: | The photovoltaic spectra of GaAs/AlGaAs superlattices and Ge_xSi_(1-x)/ Si strained layer superlattices are measured at different temperatures ranging from 18K to 300K.Six exeiton peaks corresponding to optical transitions between sub- bands are observed in GaAs/AlGaAs superlattice at temperatures below 200K,The photovoltaic spectra of GaAs/AlGaAs at temperatures below 100K reflect the step- like distribution of two-dimensional state density in superlattice.ln Ge_xSi_(1-x)/Si strained layer superlattice,the optical transitions between subbands and continuous bands are observed.The photovoltaic characteristics of the two kinds of superlat- rices are compared and analysed. |
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| Keywords: | Superlattice Photovoltaic Spectrum Optical Transition |
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