全透明低回滞s-SWCNT/AgNW薄膜晶体管的可控制备

利用高纯度、高均一性的半导体型单壁碳纳米管(s-SWCNT)网络薄膜作为薄膜晶体管的沟道材料,以高透明度、低薄膜电阻的银纳米线(Ag NW)网络薄膜作为源、漏电极,在玻璃基底上制备了大面积、高透明度的碳纳米管薄膜晶体管阵列,并使用聚甲基丙烯酸甲酯(PMMA)薄膜在器件表面通过干法封装获得了较低回滞的电子器件,得到了整体透明度达到82%以上的器件。提出的器件制备方法不仅制备材料易得,不需要高温过程,而且能够实现器件的大面积制备,对碳纳米管薄膜晶体管的全透明柔性化进程具有推进作用。

Fabrication of Fully Transparent and Low Hysteresis Thin Film Transistors Based on s SWCNT/Ag NW Electrodes

In this paper, using homogeneous and highly purified networks of semiconductor single walled carbon nanotubes (s SWCNTs) as the channel materials, and highly transparent and low sheet resistance networks of Ag nanowires (Ag NW) as the source and drain electrodes, large area and transparent carbon nanotube thin film transistors were fabricated on glass substrates. Finally, polymethyl methacrylate (PMMA) thin films were used to dry laminating encapsulate the devices to obtain low hysteresis carbon nanotube transistors. Devices with overall transparency of more than 82% were obtained. The proposed method is not only easy to prepare materials with no requirement of high temperature process, but also can achieve large area fabrication of devices, which plays an important role in promoting the fabrication of fully transparent and flexible carbon nanotube thin film transistors.