| 快速光热退火制备多晶硅薄膜 |
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| 引用本文： | 张宇翔,卢景霄,杨仕娥,王海燕,陈永生,冯团辉,李瑞,郭敏.快速光热退火制备多晶硅薄膜[J].半导体光电,2005,26(2):128-130,154. |
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| 作者姓名： | 张宇翔 卢景霄 杨仕娥 王海燕 陈永生 冯团辉 李瑞 郭敏 |
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| 作者单位： | 郑州大学,物理工程学院,河南,郑州,450052;郑州大学,物理工程学院,河南,郑州,450052;郑州大学,物理工程学院,河南,郑州,450052;郑州大学,物理工程学院,河南,郑州,450052;郑州大学,物理工程学院,河南,郑州,450052;郑州大学,物理工程学院,河南,郑州,450052;郑州大学,物理工程学院,河南,郑州,450052;郑州大学,物理工程学院,河南,郑州,450052 |
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| 摘 要： | 用等离子体增强型化学气相沉积先得到非晶硅薄膜,再用卤钨灯照射的方法对其进行快速光热退火,得到了多晶硅薄膜,它与传统退火相比,退火时间大大缩短.用XRD衍射谱、暗电导率和拉曼光谱等手段对其进行了测量.对部分样品的照射光做了滤波,滤掉了波长600 nm以下的光,发现这对晶化及晶粒尺寸都有一定的影响.
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| 关 键 词： | 多晶硅薄膜 快速光热退火 固相晶化 |
| 文章编号： | 1001-5868(2005)02-0128-03 |
Polycrystalline Silicon Films Prepared by Rapid Photo-thermal Annealing |
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| ZHANG Yu-xiang,LU Jing-xiao,YANG Shi-e,WANG Hai-yan,CHEN Yong-sheng,FENG Tuan-hui,LI Rui,GUO Min.Polycrystalline Silicon Films Prepared by Rapid Photo-thermal Annealing[J].Semiconductor Optoelectronics,2005,26(2):128-130,154. |
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| Authors: | ZHANG Yu-xiang LU Jing-xiao YANG Shi-e WANG Hai-yan CHEN Yong-sheng FENG Tuan-hui LI Rui GUO Min |
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| Abstract: | Amorphous silicon was d ep osited by plasma enhanced chemical vapor deposition (PECVD)and annealed rapidly by tungsten halogen lamps heating.The process can crystallize an amorphous silic on in less duration,with lower thermal budget than traditional furnace annealing .The structure of the obtained poly-Si film is studied by XRD and Raman spectro scopy and dark conductivity.It is found that the light filtered off some wavelen gths below 600nm will influence the crystallization and the crystal size. |
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| Keywords: | polycrystalline silicon films rapid photo-ther mal annealing solid-phase crystallization |
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