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| 基于AlAs氧化法研制的垂直腔面发射激光器 | |
| 引用本文： | 赵路民,晏长岭,孙艳芳,金珍花,王青,秦莉,刘云,宁永强,王立军.基于AlAs氧化法研制的垂直腔面发射激光器[J].半导体光电,2004,25(2):98-100,114. |
| 作者姓名： | 赵路民 晏长岭 孙艳芳 金珍花 王青 秦莉 刘云 宁永强 王立军 |
| 作者单位： | 1. 中国科学院长春光学精密机械与物理研究所,吉林,长春,130021;吉林大学,电子科学与工程学院,吉林,长春,130026 2. 中国科学院长春光学精密机械与物理研究所,吉林,长春,130021;长春理工大学,高功率半导体激光国家重点实验室,吉林,长春,130022 3. 中国科学院长春光学精密机械与物理研究所,吉林,长春,130021 |
| 基金项目： | 吉林省资助项目 , 国家自然科学基金 |
| 摘 要： | 结合垂直腔面发射激光器的制备,研究了AlAs选择性氧化工艺中氧化炉温、氮气流量、水温等条件和AlAs层的横向氧化速率之间的关系,并得到了可精确控制氧化过程的工艺条件,在优化的工艺条件下运用湿氮氧化制备出InGaAs/GaAs垂直腔面发射激光器,实现了器件的室温脉冲激射. |
| 关 键 词： | 垂直腔面发射激光器 选择性氧化 分子束外延 |
| 文章编号： | 1001-5868(2004)02-0098-03 |
InGaAs/GaAs VCSEL Fabricated by Selective Oxidation |
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| ZHAO Lu-min,YAN Chang-ling,SUN Yan-fang,JIN Zhen--hua,WANG Qing,QIN Lil,LIU Yun,NING Yong-qiang,WANG Li-jun Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun ,CHN, College of Electronic Science and Engineering,Jilin University,Changchun ,CHN,National Key Lab. on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun ,CHN.InGaAs/GaAs VCSEL Fabricated by Selective Oxidation[J].Semiconductor Optoelectronics,2004,25(2):98-100,114. | |
| Authors: | ZHAO Lu-min YAN Chang-ling SUN Yan-fang JIN Zhen--hua WANG Qing QIN Lil LIU Yun NING Yong-qiang WANG Li-jun Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun CHN College of Electronic Science and Engineering Jilin University Changchun CHN National Key Lab on High Power Semiconductor Lasers Changchun University of Science and Technology Changchun CHN |
| Affiliation: | ZHAO Lu-min,YAN Chang-ling,SUN Yan-fang,JIN Zhen--hua,WANG Qing,QIN Lil,LIU Yun,NING Yong-qiang,WANG Li-jun Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130021,CHN, College of Electronic Science and Engineering,Jilin University,Changchun 130026,CHN,National Key Lab. on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,CHN |
| Abstract: | The relation between the lateral oxidizing rate of AlAs thin layers and process conditions such as furnace temperature, N_2 flow rate and water temperature in AlAs selective wet oxidation,as well as their influence on oxidation results has been investigated for the fabrication of vertical-cavity surface emitting laser (VCSEL). Process conditions which can control the oxidation procedure and uniformity precisely are described. Pulsed lasing was realized at room temperature. |
| Keywords: | vertical-cavity surface emitting laser(VCSEL) selective oxidation MBE |
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