| SOI纳米线波导和相关器件研究进展 |
| |
| 引用本文： | 徐学俊,余金中,陈少武.SOI纳米线波导和相关器件研究进展[J].半导体光电,2007,28(1):5-9. |
| |
| 作者姓名： | 徐学俊 余金中 陈少武 |
| |
| 作者单位： | 中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083 |
| |
| 摘 要： | SOI纳米线波导具有对光场限制作用强、传输损耗低、弯曲半径小、集成度高、与传统CMOS工艺兼容等优点,采用SOI纳米线波导能够大大缩小光子器件的长度和面积,提高器件工作速度和效率,降低器件功耗.介绍了SOI纳米线波导在模式、损耗、偏振等方面与传统大尺寸硅基波导所表现出来的不同特性,评述了当前关于SOI纳米线波导和基于SOI纳米线波导光子器件的最新研究进展.
|
| 关 键 词： | 光子集成回路 纳米线波导 上/下路滤波器 调制器 光开关 |
| 文章编号： | 1001-5868(2007)01-0005-05 |
| 修稿时间： | 2006-09-27 |
Recent Progresses of Silicon-on-insulator Nanowire Waveguides and Related Devices |
| |
| XU Xue-jun,YU Jin-zhong,CHEN Shao-wu.Recent Progresses of Silicon-on-insulator Nanowire Waveguides and Related Devices[J].Semiconductor Optoelectronics,2007,28(1):5-9. |
| |
| Authors: | XU Xue-jun YU Jin-zhong CHEN Shao-wu |
| |
| Affiliation: | State Key Lab. of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHN |
| |
| Abstract: | SOI nanowire waveguides have advantages of strong optical confinement, low transmission loss, low bend radius, high integration density and fully compatible with CMOS technique, etc. The length and footprints of the devices based on these waveguides can be reduced, the operation speed and efficiency can be improved and the power can be lowered. The properties of mode, loss and polarization of SOI nanowire waveguides, which are different from those of conventional waveguides with large cross-section, are introduced. Recent progresses of SOI nanowire waveguides and several photonic devices based on these waveguides are reviewed. |
| |
| Keywords: | photonic integrated circuit(PIC) nanowire waveguide add/drop filter modulator optical switch |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
