| 温度和材料参数对InAsxSb1-x俄歇复合寿命影响的数值分析 |
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| 引用本文： | 张景波,张云琦,王思文,孙晓冰,邢春香,刘强,殷景志.温度和材料参数对InAsxSb1-x俄歇复合寿命影响的数值分析[J].半导体光电,2020,41(1):80-84. |
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| 作者姓名： | 张景波 张云琦 王思文 孙晓冰 邢春香 刘强 殷景志 |
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| 作者单位： | 长春理工大学 光电信息学院, 长春 130114,长春理工大学 光电信息学院, 长春 130114,吉林大学 电子科学与工程学院 集成光电子学国家重点实验室, 长春 130012,长春理工大学 光电信息学院, 长春 130114,长春理工大学 光电信息学院, 长春 130114,吉林大学 电子科学与工程学院 集成光电子学国家重点实验室, 长春 130012,吉林大学 电子科学与工程学院 集成光电子学国家重点实验室, 长春 130012 |
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| 摘 要： | 工作在中长波的红外探测器可被广泛应用在空间成像、军事和通信等领域,锑基InAsSb材料由于其特殊的性质是制作长波非致冷光子探测器的理想材料。俄歇复合寿命是影响探测器性能的重要因素之一,文章采用Matlab软件模拟研究了n型和p型InAsxSb1-x材料的俄歇复合寿命随温度、As组分及载流子浓度的变化。对确定的As组分,可通过优化工作温度及载流子浓度获得较长的俄歇复合寿命。当载流子浓度为3.2×1015 cm-3、温度为200K时,n型InAs0.35Sb0.65的俄歇复合寿命最大为2.91×10-9 s。
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| 关 键 词： | INASSB 俄歇复合寿命 As组分 温度 载流子浓度 |
| 收稿时间： | 2019/10/18 0:00:00 |
Studying Influence of Temperature and Material Parameters on InAsxSb1-x Auger Recombination Life by Numerical Analysis |
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| ZHANG Jingbo,ZHANG Yunqi,WANG Siwen,SUN Xiaobing,XING Chunxiang,LIU Qiang and YIN Jingzhi.Studying Influence of Temperature and Material Parameters on InAsxSb1-x Auger Recombination Life by Numerical Analysis[J].Semiconductor Optoelectronics,2020,41(1):80-84. |
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| Authors: | ZHANG Jingbo ZHANG Yunqi WANG Siwen SUN Xiaobing XING Chunxiang LIU Qiang and YIN Jingzhi |
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| Affiliation: | College of Optical and Electronical Information, Changchun University of Science and Technol., Changchun 130114, CHN,College of Optical and Electronical Information, Changchun University of Science and Technol., Changchun 130114, CHN,State Key Lab.of Integrated Optoelectron., College of Electronic Science and Engin., Jilin University, Changchun 130012, CHN,College of Optical and Electronical Information, Changchun University of Science and Technol., Changchun 130114, CHN,College of Optical and Electronical Information, Changchun University of Science and Technol., Changchun 130114, CHN,State Key Lab.of Integrated Optoelectron., College of Electronic Science and Engin., Jilin University, Changchun 130012, CHN and State Key Lab.of Integrated Optoelectron., College of Electronic Science and Engin., Jilin University, Changchun 130012, CHN |
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| Abstract: | Infrared detectors working in the medium and long wavelength can be widely used in the fields of space imaging,military,communication and so on.Antimony-based InAsSb materials are ideal materials for fabricating long-wave uncooled photon detectors due to their special properties.Auger recombination lifetime is one of the important factors affecting the performance of detectors.In this paper,Auger recombination lifetime of n and p type InAsxSb1-x materials changing with temperature,As composition and carrier concentration is studied by Matlab software.For the determined As component,the longer Auger composite life can be obtained by optimizing working temperature and carrier concentration.When the carrier concentration is 3.2×1015 cm-3 and the temperature is 200K,the maximum Auger lifetime of ntype InAs0.35Sb0.65is 2.91×10-9 s. |
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| Keywords: | InAsSb Auger recombination lifetime As composition temperature carrier concentration |
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